HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >
Research Center for Integrated Quantum Electronics >
Peer-reviewed Journal Articles, etc >

Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation

Files in This Item:
ASS244(1-4).pdf127.28 kBPDFView/Open
Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/5594

Title: Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation
Authors: Shiozaki, Nanako Browse this author
Anantathanasarn, Sanguan Browse this author
Sato, Taketomo Browse this author →KAKEN DB
Hashizume, Tamotsu4 Browse this author →KAKEN DB
Hasegawa, Hideki Browse this author →KAKEN DB
Authors(alt): 橋詰, 保4
Keywords: GaAs
AlGaAs
Quantum wire
Surface passivation
Surface states
Photoluminescence
Issue Date: 15-Mar-2005
Publisher: Elsevier B.V.
Journal Title: Applied Surface Science
Volume: 244
Issue: 1-4
Start Page: 71
End Page: 74
Publisher DOI: 10.1016/j.apsusc.2004.10.067
Abstract: Etched GaAs quantum wires (QWRs) and selectively grown (SG) QWRs were fabricated, and dependence of their photoluminescence (PL) properties on QWR width (W) and QWR distance to surface (d) were investigated. PL intensity greatly reduced with reduction of W and d, due to non-radiative recombination through surface states. Surface passivation by growing a Si interface control layer (Si-ICL) on group III-terminated surfaces greatly improved PL properties.
Relation: http://www.sciencedirect.com/science/journal/01694332
Type: article (author version)
URI: http://hdl.handle.net/2115/5594
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

Export metadata:

OAI-PMH ( junii2 , jpcoar )

MathJax is now OFF:


 

 - Hokkaido University