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Computer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model

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Title: Computer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model
Authors: Kotani, Junji Browse this author
Hasegawa, Hideki Browse this author →KAKEN DB
Hashizume, Tamotsu3 Browse this author →KAKEN DB
Authors(alt): 橋詰, 保3
Keywords: AlGaN
Schottky
Leakage current
Deep donor
Tunneling
Thermionic-field emission
Field emission
Issue Date: 15-Oct-2004
Publisher: Elsevier B.V.
Journal Title: Applied Surface Science
Volume: 237
Issue: 1-4
Start Page: 213
End Page: 218
Publisher DOI: 10.1016/j.apsusc.2004.06.152
Abstract: This paper attempts a rigorous computer simulation of the current transport in GaN and AlGaN Schottky diodes on the basis of the thin surface barrier (TSB) model recently proposed by the authors’ group. First, a computer program was developed which can calculate current transport through an arbitrary potential profile of Schottky barrier by a combined mechanism of thermionic emission (TE), thermionic-field emission (TFE) and field emission (FE). Then, from the view point of the TSB model, attempts were made to fit the theoretical temperature dependent current voltage (I–V–T) curves to the measured I–V–T data taken on Ni/n-GaN and Ni/n-AlGaN Schottky diodes changing the barrier profiles and the energy depth of the surface donor. As compared with the previous poor fitting using approximate analytic formulas, excellent fitting was obtained for both forward and reverse current, confirming the validity of the TSB model as the mechanism for anomalously large leakage currents in GaN and AlGaN Schottky diodes. Best fittings for GaN and Al 0.26 Ga 0.74 N were obtained for exponentially decaying distributions of surface defect donors with the peak density of 5 × 10(18) cm(−3) and 1 × 10(19) cm(−3), the characteristic decay depth of 11 nm and 11.5 nm and the energy depth of 0.25 eV and 0.37 eV, respectively.
Relation: http://www.sciencedirect.com/science/journal/01694332
Type: article (author version)
URI: http://hdl.handle.net/2115/5597
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

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