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Mechanism of current leakage through metal/n-GaN interfaces

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Title: Mechanism of current leakage through metal/n-GaN interfaces
Authors: Oyama, Susumu Browse this author
Hashizume, Tamotsu2 Browse this author →KAKEN DB
Hasegawa, Hideki Browse this author →KAKEN DB
Authors(alt): 橋詰, 保2
Keywords: GaN
Schottky
Leakage current
Tunneling
Thermionic-field emission
Surface trap
Issue Date: 8-May-2002
Publisher: Elsevier Science B.V.
Journal Title: Applied Surface Science
Volume: 190
Issue: 1-4
Start Page: 322
End Page: 325
Publisher DOI: 10.1016/S0169-4332(01)00902-3
Abstract: Detailed current–voltage–temperature (I–V–T) measurements were performed on the Schottky diodes fabricated on MOVPE-grown n-GaN layers. A large deviation from the thermionic emission (TE) transport was observed in the reverse I–V curves with a large excess leakage. From the calculation based on the thermionic-field emission (TFE) model, it was found that the tunneling plays an important role in the carrier transport across the GaN Schottky barrier even for doping densities as low as 1×10(17) cm(−3). A novel barrier-modified TFE model based on presence of near-surface fixed charges or surface states is proposed to explain the observed large reverse leakage currents.
Relation: http://www.sciencedirect.com/science/journal/01694332
Type: article (author version)
URI: http://hdl.handle.net/2115/5599
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

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