Surface Passivation of AlGaN/GaN Heterostructures Using an Ultrathin Al2O3 Layer

Ootomo, S.; Hashizume, T.; Hasegawa, H.

doi:10.1002/1521-396X(200111)188:1<371::AID-PSSA371>3.0.CO;2-P


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Surface Passivation of AlGaN/GaN Heterostructures Using an Ultrathin Al2O3 Layer

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/5600

Title:	Surface Passivation of AlGaN/GaN Heterostructures Using an Ultrathin Al2O3 Layer
Authors:	Ootomo, S. Browse this author
	Hashizume, T.² Browse this author →KAKEN DB
	Hasegawa, H. Browse this author
Authors(alt):	橋詰, 保²
Keywords:	73.40.Qv
	79.60.Jv
	81.65.Rv
	S7.14
	S10.1
Issue Date:	22-Nov-2001
Publisher:	WILEY-VCH Verlag Berlin
Journal Title:	Physica Status Solidi (a)
Volume:	188
Issue:	1
Start Page:	371
End Page:	374
Publisher DOI:	10.1002/1521-396X(200111)188:1<371::AID-PSSA371>3.0.CO;2-P
Abstract:	We demonstrate a novel surface passivation process for AlGaN/GaN heterostructures utilizing an ultrathin Al2O3 layer (~1 nm). The Al deposition and thermal annealing processes in UHV were found to form the ultrathin Al2O3 layer on the surface of the AlGaN/GaN heterostructure, which was confirmed by in-situ X-ray photoelectron spectroscopy (XPS) analysis. The reverse leakage current for the Schottky gate contact on the Al2O3-passivated heterostructure surface was reduced by three orders of magnitude compared to that for the conventional Schottky gate structure. C-V results showed good gate controllability of the two-dimensional electron gas (2DEG) by the novel gate structure.
Description:	Published in physica status solidi (a), 2001, Wiiley-VCH Verlag GmbH & Co. KGaA, Weinheim
Relation:	http://www.interscience.wiley.com/
Type:	article
URI:	http://hdl.handle.net/2115/5600
Appears in Collections:	量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰保

OAI-PMH ( junii2 , jpcoar_1.0 )

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