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Surface Passivation of AlGaN/GaN Heterostructures Using an Ultrathin Al2O3 Layer

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Title: Surface Passivation of AlGaN/GaN Heterostructures Using an Ultrathin Al2O3 Layer
Authors: Ootomo, S. Browse this author
Hashizume, T.2 Browse this author →KAKEN DB
Hasegawa, H. Browse this author
Authors(alt): 橋詰, 保2
Keywords: 73.40.Qv
79.60.Jv
81.65.Rv
S7.14
S10.1
Issue Date: 22-Nov-2001
Publisher: WILEY-VCH Verlag Berlin
Journal Title: Physica Status Solidi (a)
Volume: 188
Issue: 1
Start Page: 371
End Page: 374
Publisher DOI: 10.1002/1521-396X(200111)188:1<371::AID-PSSA371>3.0.CO;2-P
Abstract: We demonstrate a novel surface passivation process for AlGaN/GaN heterostructures utilizing an ultrathin Al2O3 layer (~1 nm). The Al deposition and thermal annealing processes in UHV were found to form the ultrathin Al2O3 layer on the surface of the AlGaN/GaN heterostructure, which was confirmed by in-situ X-ray photoelectron spectroscopy (XPS) analysis. The reverse leakage current for the Schottky gate contact on the Al2O3-passivated heterostructure surface was reduced by three orders of magnitude compared to that for the conventional Schottky gate structure. C-V results showed good gate controllability of the two-dimensional electron gas (2DEG) by the novel gate structure.
Description: Published in physica status solidi (a), 2001, Wiiley-VCH Verlag GmbH & Co. KGaA, Weinheim
Relation: http://www.interscience.wiley.com/
Type: article
URI: http://hdl.handle.net/2115/5600
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

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