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Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction by scaling of channel length

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/56399

Title: Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction by scaling of channel length
Authors: Tomioka, Katsuhiro Browse this author →KAKEN DB
Fukui, Takashi Browse this author →KAKEN DB
Issue Date: 19-Feb-2014
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 104
Issue: 7
Start Page: 073507
Publisher DOI: 10.1063/1.4865921
Abstract: We report on a fabrication of tunnel field-effect transistors using InGaAs nanowire/Si heterojunctions and the characterization of scaling of channel lengths. The devices consisted of single InGaAs nanowires with a diameter of 30 nm grown on p-type Si(111) substrates. The switch demonstrated steep subthreshold-slope (30 mV/decade) at drain-source voltage (V-DS) of 0.10 V. Also, pinch-off behavior appeared at moderately low VDS, below 0.10 V. Reducing the channel length of the transistors attained a steep subthreshold slope (< 60 mV/decade) and enhanced the drain current, which was 100 higher than that of the longer channels. (C) 2014 AIP Publishing LLC.
Rights: Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 104, 073507(2014) and may be found at http://scitation.aip.org/content/aip/journal/apl/104/7/10.1063/1.4865921
Type: article
URI: http://hdl.handle.net/2115/56399
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 福井 孝志

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