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A simple drain current model for single-walled carbon nanotube network thin-film transistors

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/56755

Title: A simple drain current model for single-walled carbon nanotube network thin-film transistors
Authors: Sano, Eiichi Browse this author →KAKEN DB
Tanaka, Tomo Browse this author
Issue Date: 17-Apr-2014
Publisher: American Institute of Physics
Journal Title: Journal of Applied Physics
Volume: 115
Issue: 15
Start Page: 154507
Publisher DOI: 10.1063/1.4871775
Abstract: Single-walled carbon nanotube (CNT) network thin-film transistors (TFTs) are attractive owing to their simple, low-cost fabrication methods. However, the detailed operation mechanism for TFTs is still unclear. In this paper, we present a simple model for the drain current of CNT network TFTs operated in the linear region. The model is based on the gate electrostatics and the continuity condition of the currents through CNT and CNT-CNT tunnel junction. The model is evaluated by comparing its calculations to experimentally measured drain current and low frequency (1/f) noise parameters. Even though the present model is based on simplified assumptions, it provides useful information to improve the TFT performance. (C) 2014 AIP Publishing LLC.
Rights: Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 115, 154507(2014) and may be found at http://scitation.aip.org/content/aip/journal/jap/115/15/10.1063/1.4871775
Type: article
URI: http://hdl.handle.net/2115/56755
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐野 栄一

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