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Correlation between Structural and Photoelectrochemical Properties of GaN Porous Nanostructures Formed by Photo-Assisted Electrochemical Etching

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/56975

Title: Correlation between Structural and Photoelectrochemical Properties of GaN Porous Nanostructures Formed by Photo-Assisted Electrochemical Etching
Authors: Kumazaki, Yusuke Browse this author
Watanabe, Akio Browse this author
Yatabe, Zenji Browse this author
Sato, Taketomo Browse this author →KAKEN DB
Issue Date: 6-Aug-2014
Publisher: The Electrochemical Society
Journal Title: Journal of the Electrochemical Society
Volume: 161
Issue: 10
Start Page: H705
End Page: H709
Publisher DOI: 10.1149/2.1101410jes
Abstract: We investigated the correlation between structural and photoelectrochemical properties of GaN porous nanostructures formed by photo-assisted electrochemical etching. The porous nanostructures were formed during light irradiation of the top-surface of homo-epitaxial layers grown on freestanding GaN substrates. The pore depth, wall thickness, and surface morphology of porous nanostructures were strongly influenced by the way holes generated by the light irradiation were supplied. Such structural features influenced the optical properties of GaN porous nanostructures. The photoluminescence peaks measured on GaN porous nanostructures were shifted to higher energies because of the quantum confinement in the thin GaN walls between pores. Formation of porous nanostructure decreased the photoreflectance of the GaN surface, and the smallest reflectance was obtained from the porous sample having large pores on its surface after the ultrathin layer with small pores had been removed by surface-etching. The photoelectrochemical response measured on GaN porous nanostructures in a NaCl electrolyte were drastically enhanced by the unique features of those structures, such as low photoreflectance and large surface area. The largest photocurrents were obtained from the sample from which H3PO4 treatment had removed the ultrathin layer without thinning the pore walls.
Rights: © The Electrochemical Society, Inc. 2014. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in J. Electrochem. Soc., Volume 161, Issue 10, pp. H705-H709, 2014.
Type: article
URI: http://hdl.handle.net/2115/56975
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐藤 威友

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