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Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors

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Title: Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors
Authors: Asubar, Joel T. Browse this author
Yatabe, Zenji Browse this author
Hashizume, Tamotsu Browse this author →KAKEN DB
Issue Date: 4-Aug-2014
Publisher: American Institute of Physics
Journal Title: Applied Physics Letters
Volume: 105
Issue: 5
Start Page: 53510
Publisher DOI: 10.1063/1.4892538
Abstract: Dramatic reduction of thermal resistance was achieved in AlGaN/GaN Multi-Mesa-Channel (MMC) high electron mobility transistors (HEMTs) on sapphire substrates. Compared with the conventional planar device, the MMC HEMT exhibits much less negative slope of the I-D-V-DS curves at high V-DS regime, indicating less self-heating. Using a method proposed by Menozzi and co-workers, we obtained a thermal resistance of 4.8 K-mm/W at ambient temperature of similar to 350K and power dissipation of similar to 9W/mm. This value compares well to 4.1 K-mm/W, which is the thermal resistance of AlGaN/GaN HEMTs on expensive single crystal diamond substrates and the lowest reported value in literature.
Rights: Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 105, 053510 (2014); doi: 10.1063/1.4892538 and may be found at
Type: article
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: Asubar Joel Tacla

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