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Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Engineering / Faculty of Engineering >
Peer-reviewed Journal Articles, etc >
Versatile Simple Doping Technique for Diamond by Solid Dopant Source Immersion during Microwave Plasma CVD
| Title: | Versatile Simple Doping Technique for Diamond by Solid Dopant Source Immersion during Microwave Plasma CVD |
| Authors: | Tamura, Takahiro Browse this author | | Yanase, Takashi Browse this author | | Nagahama, Taro Browse this author | | Wakeshima, Makoto Browse this author | | Hinatsu, Yukio Browse this author | | Shimada, Toshihiro Browse this author →KAKEN DB |
| Issue Date: | 5-Oct-2014 |
| Publisher: | The Chemical Society of Japan |
| Journal Title: | Chemistry Letters |
| Volume: | 43 |
| Issue: | 10 |
| Start Page: | 1569 |
| End Page: | 1571 |
| Publisher DOI: | 10.1246/cl.140598 |
| Abstract: | We demonstrate a new doping technique for (CVD) growth of diamond. The method involves immersing a solid-state dopant source into the plasma of microwave plasma-assisted CVD. We applied this simple and versatile technique to the growth of boron-doped diamond. The grown films were characterized by X-ray diffraction (XRD), Raman spectroscopy, glow discharge optical emission spectroscopy (GDOES) and electrical conductivity measurement. The average concentration of boron was 0.5 atomic % and the conductivity was 1.5 x 10-2 Ωcm, which showed irregular behavior at low temperature. |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/57577 |
| Appears in Collections: | 工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 島田 敏宏
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