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Magnetoresistance effects and spin-valve like behavior of an arrangement of two MnAs nanoclusters

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/57750

Title: Magnetoresistance effects and spin-valve like behavior of an arrangement of two MnAs nanoclusters
Authors: Fischer, M. Browse this author
Elm, M. T Browse this author
Sakita, S. Browse this author
Hara, S. Browse this author →KAKEN DB
Klar, P. J Browse this author
Issue Date: 20-Jan-2015
Publisher: American Instutute of Physics
Journal Title: Applied Physics Letters
Volume: 106
Issue: 3
Start Page: 032401
Publisher DOI: 10.1063/1.4906036
Abstract: We report on magnetotransport measurements on a MnAs nanocluster arrangement consisting of two elongated single-domain clusters connected by a metal spacer. The arrangement was grown on GaAs(111)B-substrates by selective-area metal organic vapor phase epitaxy. Its structural properties were investigated using scanning-electron microscopy and atomic-force microscopy, while its magnetic domain structure was analyzed by magnetic-force microscopy. The magnetoresistance of the arrangement was investigated at 120 K for two measurement geometries with the magnetic field oriented in the sample plane. For both geometries, discrete jumps of the magnetoresistance of the MnAs nanocluster arrangement were observed. These jumps can be explained by magnetic-field induced switching of the relative orientation of the magnetizations of the two clusters which affects the spin-dependent scattering in the interface region between the clusters. For a magnetic field orientation parallel to the nanoclusters' elongation direction a spin-valve like behavior was observed, showing that ferromagnetic nanoclusters may be suitable building blocks for planar magnetoelectronic devices.
Rights: Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 106, 032401, 2015, and may be found at http://dx.doi.org/10.1063/1.4906036
Type: article
URI: http://hdl.handle.net/2115/57750
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 原 真二郎

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