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Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors
| Title: | Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors |
| Authors: | Hasegawa, Hideki Browse this author →KAKEN DB | | Inagaki, Takanori Browse this author | | Ootomo, Shinya Browse this author | | Hashizume, Tamotsu4 Browse this author →KAKEN DB |
| Authors(alt): | 橋詰, 保4 |
| Issue Date: | 5-Aug-2003 |
| Publisher: | AVS Science & Technology of Materials, Interfaces, and Processing |
| Journal Title: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures |
| Volume: | 21 |
| Issue: | 4 |
| Start Page: | 1844 |
| End Page: | 1855 |
| Publisher DOI: | 10.1116/1.1589520 |
| Abstract: | In order to clarify the mechanisms of drain current collapse and gate leakage currents in the AlGaN/GaN heterostructure field effect transistor (HFET), detailed electrical properties of the ungated portion and Schottky-gated portion of the device were investigated separately, using a gateless HFET structure and an AlGaN Schottky diode structure. The gateless device was subjected to plasma treatments and surface passivation processes including our novel Al2O3-based surface passivation. dc I–V curves of gateless HFETs were highly nonlinear due to virtual gating by surface states. After drain stress, air-exposed, H2 plasma-treated and SiO2-deposited gateless HFETs showed an initial large-amplitude exponential current transient followed by a subsequent smaller, slow, and highly nonexponential response. The former was explained by emission from deep donors at Ec–0.37 eV, and the latter by emission from surface states. Capture transients with stress-dependent capture barriers were also observed. An x-ray photoelectron spectroscopy (XPS) study indicated that 0.37 eV-deep donors are N-vacancy related. On the other hand, no current transients took place in N2 plasma treated and Al2O3-passivated samples. Temperature dependences of I–V curves of Schottky diodes were extremely small and reverse currents were anomalously large. They were explained by the "thin surface barrier" (TSB) model where thermionic field emission and field emission through the TSB region formed by deep donors produce leakage current paths. By combining the results on gateless HFETs and Schottky diodes, a new unified model of near-surface electronic states for the free surface and Schottky interface of AlGaN is proposed. It consists of a U-shaped surface state continuum and N-vacancy related near-surface discrete deep donors. The model can explain the observed large gate leakage and drain current collapse in AlGaN/GaN HFETs in a unified way. It is also shown that our novel Al2O3 passivation, when also used as a gate insulator, can completely suppress current collapse and gate leakage. |
| Type: | article |
| URI: | http://hdl.handle.net/2115/5805 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 橋詰 保
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