HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >
量子集積エレクトロニクス研究センター  >
雑誌発表論文等  >

Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures

フルテキスト
JVSTB19-4.pdf155.84 kBPDF見る/開く
この文献へのリンクには次のURLを使用してください:http://hdl.handle.net/2115/5806

タイトル: Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures
著者: Hashizume, Tamotsu 著作を一覧する
Ootomo, Shinya 著作を一覧する
Oyama, Susumu 著作を一覧する
Konishi, Masanobu 著作を一覧する
Hasegawa, Hideki 著作を一覧する
発行日: 2001年 7月
出版者: AVS Science & Technology of Materials, Interfaces, and Processing
誌名: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
巻: 19
号: 4
開始ページ: 1675
終了ページ: 1681
出版社 DOI: 10.1116/1.1383078
抄録: Chemical and electrical properties of the surfaces of GaN and GaN/AlGaN heterostructures were systematically investigated by x-ray photoelectron spectroscopy (XPS), capacitance–voltage, and current–voltage measurements. From in situ XPS study, relatively smaller band bending of 0.6 eV was seen at the GaN (2×2) surface grown by radio frequency-assisted molecular beam epitaxy on the metalorganic vapor phase epitaxy GaN template. After exposing the sample surface to air, strong band bending took place at the surface. The surface treatment in NH4OH solution and N2 plasma was found to reduce the surface Fermi level pinning. Surface passivation process of GaN utilizing SiNx film by electron-cyclotron-resonance assisted plasma chemical vapor deposition (ECR–CVD) achieved low interface state density, 2×1011cm–2 eV–1. No pronounced stress remained at the SiNx/GaN interface, which was confirmed by Raman spectroscopy. The present NH4OH/ECR–N2 plasma treatment was also found to be effective in realizing well-ordered and nearly oxide-free surface of a GaN/AlGaN heterostructure. The subsequent passivation process using the ECR–CVD SiNx film enhanced the drain current in the gateless GaN/AlGaN high electron mobility transistor. A surface passivation process utilizing an ultrathin Al-oxide layer reduced leakage current and improved gate controllability of two-dimensional electron gas in the Schottky gate contact fabricated on the GaN/AlGaN heterostructures.
資料タイプ: article
URI: http://hdl.handle.net/2115/5806
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 橋詰 保

 

本サイトに関するご意見・お問い合わせは repo at lib.hokudai.ac.jp へお願いします。 - 北海道大学