HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Engineering / Faculty of Engineering >
Peer-reviewed Journal Articles, etc >

Design and fabrication of 2.4 GHz pre-biased rectifier

Files in This Item:
AICSP79-2 301-307.pdf557.9 kBPDFView/Open
Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/58540

Title: Design and fabrication of 2.4 GHz pre-biased rectifier
Authors: Otsu, Yutaro Browse this author
Kubo, Keishi Browse this author
Ikebe, Masayuki Browse this author
Sano, Eiichi Browse this author →KAKEN DB
Keywords: Rectifier
Sensor network
2.4 GHz
RF
Low-power pulse generator
Subthreshold CMOS
Issue Date: May-2014
Publisher: Springer
Journal Title: Analog integrated Circuits and Signal Processing
Volume: 79
Issue: 2
Start Page: 301
End Page: 307
Publisher DOI: 10.1007/s10470-014-0256-6
Abstract: A 2.4 GHz rectifier operating in a region of low RF input power was developed. The rectifier has a cross-coupled bridge configuration and is driven by a differential RF input signal. Since a rectifier needs an RF signal higher than the threshold voltage of transistors, we introduced a pre-biasing circuit to compensate for the threshold voltage. A low-voltage digital circuit, subthreshold voltage regulator, and low-power level shifter were introduced for reducing the power consumption of the pre-biasing circuit and increasing the driving voltage for the switches at the same time. The circuit simulations revealed that the pre-biasing circuit was effective in a low RF input power region. However, the output voltage was degraded in a high power region. Then, we combined the pre-biased rectifier in parallel with a non-biased rectifier. Three types of rectifiers consisting of LC matching circuits, three-stage rectifier cells, and biasing circuits were designed and fabricated using a 0.18-mu m mixed signal/RF CMOS process with one poly and six metal layers. The fabricated pre-biased rectifier operated in a region of RF input power of less than -15 dBm, while the non-biased rectifier could not operate in this region. The parallel combination of pre-biased and non-biased rectifiers effectively solved the drawback of the pre-biased rectifier in a high RF input power region.
Rights: The final publication is available at link.springer.com
Type: article (author version)
URI: http://hdl.handle.net/2115/58540
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐野 栄一

Export metadata:

OAI-PMH ( junii2 , jpcoar_1.0 )

MathJax is now OFF:


 

 - Hokkaido University