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Ferromagnetic nanoclusters hybridized in Mn-incorporated GaInAs layers during metal–organic vapour phase epitaxial growth on InP layers under low growth temperature conditions

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Title: Ferromagnetic nanoclusters hybridized in Mn-incorporated GaInAs layers during metal–organic vapour phase epitaxial growth on InP layers under low growth temperature conditions
Authors: Hara, Shinjiroh1 Browse this author →KAKEN DB
Kuramata, Akito Browse this author
Authors(alt): 原, 真二郎1
Issue Date: Jun-2005
Publisher: Institute of Physics
Journal Title: Nanotechnology
Volume: 16
Issue: 6
Start Page: 957
End Page: 965
Publisher DOI: 10.1088/0957-4484/16/6/057
Abstract: We demonstrate the successful formation of ferromagnetic nanoclusters in Mn-incorporated GaInAs layers grown by metal–organic vapour phase epitaxy on InP(100) substrates under low growth temperature conditions below 450 °C. We find that MnAs nanoclusters with NiAs-type hexagonal crystallographic structures, which show ferromagnetic characteristics up to a relatively high temperature of about 305 K, are formed near the layer surfaces of Mn-incorporated GaInAs layers grown at 440 °C. After deposition of undoped InP layers on Mn-incorporated GaInAs layers, MnP nanoclusters with orthorhombic cubic crystallographic structures, in which 7% arsenic is incorporated, are formed in InP layers. The samples with MnP nanoclusters show strong ferromagnetic coupling up to about 305 K, although the Curie temperature of MnP bulk compounds is 291 K. Energy dispersive x-ray spectroscopy (EDS) indicates that Mn concentrations in InP and GaInAs layers surrounding MnP nanoclusters are almost negligible. MnAs nanoclusters are also formed in Mn-incorporated GaAs layers grown under low growth temperature conditions of 450 °C on GaAs(100) substrates. From the results of magnetic characterizations with respect to growth temperatures of the samples, we found that all the Mn-incorporated GaAs layers grown at temperatures below 450 °C showed ferromagnetic behaviour.
Description URI: http://www.iop.org/
Rights: Copyright © 2005 IOP Publishing Ltd.
Type: article (author version)
URI: http://hdl.handle.net/2115/5870
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 原 真二郎

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