|
Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Engineering / Faculty of Engineering >
Peer-reviewed Journal Articles, etc >
Site-selective silicon adatom desorption using femtosecond laser pulse pairs and scanning tunneling microscopy
| Title: | Site-selective silicon adatom desorption using femtosecond laser pulse pairs and scanning tunneling microscopy |
| Authors: | Futaba, D. N. Browse this author | | Morita, R. Browse this author →KAKEN DB | | Yamashita, M.3 Browse this author →KAKEN DB | | Tomiyama, S. Browse this author | | Shigekawa, H. Browse this author |
| Authors(alt): | 山下, 幹雄3 |
| Issue Date: | 22-Sep-2003 |
| Publisher: | American Institute of Physics |
| Journal Title: | APPLIED PHYSICS LETTERS |
| Volume: | 83 |
| Issue: | 12 |
| Start Page: | 2333 |
| End Page: | 2335 |
| Publisher DOI: | 10.1063/1.1613361 |
| Abstract: | We performed an experimental study of silicon adatom desorption from the Si(111)-737 surface using femtosecond laser pulse pair excitation with 80 fs pulse duration, 800 nm center wavelength, 300 mW average power, and a 100 MHz repetition rate. Using scanning tunneling microscopy, we directly recorded the desorption characteristics at each delay setting for each of the four adatom binding sites. The study revealed a preferential dependence between the delay time and the adatom sites within a 66.6–1000 fs delay range. |
| Rights: | Copyright © 2003 American Institute of Physics |
| Relation: | http://www.aip.org/ |
| Type: | article |
| URI: | http://hdl.handle.net/2115/5874 |
| Appears in Collections: | 工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
|
Submitter: 山下 幹雄
|
