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Fabrication and evaluation of series-triple quantum dots by thermal oxidation of silicon nanowire

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Title: Fabrication and evaluation of series-triple quantum dots by thermal oxidation of silicon nanowire
Authors: Uchida, Takafumi Browse this author
Jo, Mingyu Browse this author
Tsurumaki-Fukuchi, Atsushi Browse this author
Arita, Masashi Browse this author →KAKEN DB
Fujiwara, Akira Browse this author
Takahashi, Yasuo Browse this author →KAKEN DB
Issue Date: Nov-2015
Publisher: American Institute of Physics (AIP)
Journal Title: AIP advances
Volume: 5
Issue: 11
Publisher DOI: 10.1063/1.4936563
Abstract: Series-connected triple quantum dots were fabricated by a simple two-step oxidation technique using the pattern-dependent oxidation of a silicon nanowire and an additional oxidation of the nanowire through the gap of the fine gates attached to the nanowire. The characteristics of multi-dot single-electron devices are obtained. The formation of each quantum dot beneath an attached gate is confirmed by analyzing the electrical characteristics and by evaluating the gate capacitances between all pairings of gates and quantum dots. Because the gate electrode is automatically attached to each dot, the device structure benefits from scalability. This technique promises integrability of multiple quantum dots with individual control gates. (C) 2015 Author(s).
Rights: http://creativecommons.org/licenses/by/3.0/
Type: article
URI: http://hdl.handle.net/2115/60524
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 内田 貴史

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