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Selective-area growth and magnetic characterization of MnAs/AlGaAs nanoclusters on insulating Al2O3 layers crystallized on Si(111) substrates
| Title: | Selective-area growth and magnetic characterization of MnAs/AlGaAs nanoclusters on insulating Al2O3 layers crystallized on Si(111) substrates |
| Authors: | Sakita, Shinya Browse this author | | Hara, Shinjiro Browse this author →KAKEN DB | | Elm, Matthias T. Browse this author | | Klar, Peter J. Browse this author |
| Issue Date: | 25-Jan-2016 |
| Publisher: | American Institute of Physics |
| Journal Title: | Applied Physics Letters |
| Volume: | 108 |
| Issue: | 4 |
| Start Page: | 043108 |
| Publisher DOI: | 10.1063/1.4941082 |
| Abstract: | We report on selective-area metal-organic vapor phase epitaxy and magnetic characterization of coupled MnAs/AlGaAs nanoclusters formed on thin Al2O3 insulating layers crystallized on Si(111) substrates. Cross-sectional transmission electron microscopy reveals that poly-crystalline c-Al2O3 grains are formed after an annealing treatment of the amorphous Al2O3 layers deposited by atomic layer deposition on Si(111) substrates. The h111i direction of the c-Al2O3 grains tends to be oriented approximately parallel to the h111i direction of the Si substrate. We observe that hexagonal MnAs nanoclusters on AlGaAs buffer layers grown by selective-area metal-organic vapor phase epitaxy on partially SiO2-masked Al2O3 insulator crystallized on Si(111) substrates are oriented with the c-axis along the h111i direction of the substrates, but exhibit a random in-plane orientation. A likely reason is the random orientation of the poly-crystalline c-Al2O3 grains in the Al2O3 layer plane. Magnetic force microscopy studies at room temperature reveal that arrangements of coupled MnAs nanoclusters exhibit a complex magnetic domain structure. Such arrangements of coupled MnAs nanoclusters may also show magnetic random telegraph noise, i.e., jumps between two discrete resistance levels, in a certain temperature range, which can be explained by thermally activated changes of the complex magnetic structure of the nanocluster arrangements. |
| Rights: | Copyright 2016 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 108, 043108 (2016) and may be found at http://scitation.aip.org/content/aip/journal/apl/108/4/10.1063/1.4941082 |
| Type: | article |
| URI: | http://hdl.handle.net/2115/60613 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 原 真二郎
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