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Hokkaido University Collection of Scholarly and Academic Papers >
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Recent Progress in Vertical Si/III-V Tunnel FETs : From Fundamentals to Current-Boosting Technology
| Title: | Recent Progress in Vertical Si/III-V Tunnel FETs : From Fundamentals to Current-Boosting Technology |
| Authors: | Tomioka, Katsuhiro Browse this author →KAKEN DB | | Motohisa, Junichi Browse this author →KAKEN DB | | Fukui, Takashi Browse this author →KAKEN DB |
| Issue Date: | Oct-2016 |
| Publisher: | The Electrochemical Society (ECS) |
| Journal Title: | ECS Transactions |
| Volume: | 75 |
| Issue: | 5 |
| Start Page: | 127 |
| End Page: | 134 |
| Publisher DOI: | 10.1149/07505.0127ecst |
| Abstract: | Tunnel field-effect transistors (TFETs) with a steep subthreshold-slope (SS) are promising low-power switches for future large-scale integrated circuits (LSIs) with low power consumption and high performance. Recently, we demonstrated vertical TFETs with III-V/Si heterojunctions. This new sort of tunnel junction achieves a steep SS because of its unique figure-of-merit. Here, we report on recent progress on vertical TFETs using Si/III-V heterojunctions and means for boosting on-state current. |
| Rights: | © The Electrochemical Society, Inc. 2016. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Transactions, 75 (5) 127-134 (2016). |
| Type: | article |
| URI: | http://hdl.handle.net/2115/64539 |
| Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 冨岡 克広
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