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Recent Progress in Vertical Si/III-V Tunnel FETs : From Fundamentals to Current-Boosting Technology

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ECS Trans.-2016-Tomioka-127-34 - Recent Progress in vertical nanowire TFETs.pdf794.42 kBPDFView/Open
Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/64539

Title: Recent Progress in Vertical Si/III-V Tunnel FETs : From Fundamentals to Current-Boosting Technology
Authors: Tomioka, Katsuhiro Browse this author →KAKEN DB
Motohisa, Junichi Browse this author →KAKEN DB
Fukui, Takashi Browse this author →KAKEN DB
Issue Date: Oct-2016
Publisher: The Electrochemical Society (ECS)
Journal Title: ECS Transactions
Volume: 75
Issue: 5
Start Page: 127
End Page: 134
Publisher DOI: 10.1149/07505.0127ecst
Abstract: Tunnel field-effect transistors (TFETs) with a steep subthreshold-slope (SS) are promising low-power switches for future large-scale integrated circuits (LSIs) with low power consumption and high performance. Recently, we demonstrated vertical TFETs with III-V/Si heterojunctions. This new sort of tunnel junction achieves a steep SS because of its unique figure-of-merit. Here, we report on recent progress on vertical TFETs using Si/III-V heterojunctions and means for boosting on-state current.
Rights: © The Electrochemical Society, Inc. 2016. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Transactions, 75 (5) 127-134 (2016).
Type: article
URI: http://hdl.handle.net/2115/64539
Appears in Collections:情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 冨岡 克広

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