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Recent Progress in Vertical Si/III-V Tunnel FETs : From Fundamentals to Current-Boosting Technology

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ECS Trans.-2016-Tomioka-127-34 - Recent Progress in vertical nanowire TFETs.pdf794.42 kBPDF見る/開く
この文献へのリンクには次のURLを使用してください:http://hdl.handle.net/2115/64539

タイトル: Recent Progress in Vertical Si/III-V Tunnel FETs : From Fundamentals to Current-Boosting Technology
著者: Tomioka, Katsuhiro 著作を一覧する
Motohisa, Junichi 著作を一覧する
Fukui, Takashi 著作を一覧する
発行日: 2016年10月
出版者: The Electrochemical Society (ECS)
誌名: ECS Transactions
巻: 75
号: 5
開始ページ: 127
終了ページ: 134
出版社 DOI: 10.1149/07505.0127ecst
抄録: Tunnel field-effect transistors (TFETs) with a steep subthreshold-slope (SS) are promising low-power switches for future large-scale integrated circuits (LSIs) with low power consumption and high performance. Recently, we demonstrated vertical TFETs with III-V/Si heterojunctions. This new sort of tunnel junction achieves a steep SS because of its unique figure-of-merit. Here, we report on recent progress on vertical TFETs using Si/III-V heterojunctions and means for boosting on-state current.
Rights: © The Electrochemical Society, Inc. 2016. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in ECS Transactions, 75 (5) 127-134 (2016).
資料タイプ: article
URI: http://hdl.handle.net/2115/64539
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 冨岡 克広

 

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