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Formation of GaN porous structures with improved structural controllability by photoassisted electrochemical etching
| Title: | Formation of GaN porous structures with improved structural controllability by photoassisted electrochemical etching |
| Authors: | Kumazaki, Yusuke Browse this author | | Yatabe, Zenji Browse this author | | Sato, Taketomo Browse this author →KAKEN DB |
| Issue Date: | Apr-2016 |
| Publisher: | IOP Publishing |
| Journal Title: | Japanese Journal of Applied Physics (JJAP) |
| Volume: | 55 |
| Issue: | 4 |
| Start Page: | 04EJ12 |
| Publisher DOI: | 10.7567/JJAP.55.04EJ12 |
| Abstract: | We aimed to develop a photoassisted electrochemical etching process for the formation of GaN porous structures. Pore linearity and depth controllability were strongly affected by the anode voltage. In addition, the use of light with an energy below the band gap played an important role in controlling the pore diameter. Spectro-electrochemical measurements revealed that the high electric field induced at the GaN/electrolyte interface caused a redshift of the photoabsorption edge. This specific phenomenon can be explained by a theoretical calculation based on the Franz-Keldysh effect. On the basis of the results of our experimental and theoretical analyze, we propose a formation model for GaN porous structures. We also note that the application of the Franz-Keldysh effect is useful in controlling the structural properties of GaN porous structures. |
| Rights: | © 2016 The Japan Society of Applied Physics |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/64688 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 佐藤 威友
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