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Detection of molecular charge dynamics through current noise in a GaAs-based nanowire FET

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Title: Detection of molecular charge dynamics through current noise in a GaAs-based nanowire FET
Authors: Inoue, Shinya Browse this author
Kuroda, Ryota Browse this author
Yin, Xiang Browse this author
Sato, Masaki Browse this author
Kasai, Seiya Browse this author →KAKEN DB
Issue Date: Apr-2015
Publisher: IOP Publishing
Journal Title: Japanese Journal of Applied Physics(JJAP)
Volume: 54
Issue: 4S
Start Page: 04DN07
Publisher DOI: 10.7567/JJAP.54.04DN07
Abstract: The detection of static and dynamic molecular charge states using a GaAs-based nanowire field-effect transistor (FET) was investigated. Tetraphenylporphyrin (TPP) was put on the device as target molecules. After coating TPP on the FET, the drain current clearly decreased. On the other hand, the current largely increased by 405-nm light irradiation, indicating that TPP worked as a photo-excited donor. The light irradiation on the FET also induced a Lorentzian noise component, which was superimposed onto conventional 1/f noise. These behaviors were not seen in the gateless nanowire even with TPP. The obtained results indicated that electrical interaction between TPP and the nanowire was enhanced when a metal gate existed, although the channel was protected from TPP by the gate metal. We discuss the observed behaviors on the basis of a model where only TPP in the gate periphery modulated the channel potential and the drain current.
Rights: © 2015 The Japan Society of Applied Physics
Type: article (author version)
URI: http://hdl.handle.net/2115/66631
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 葛西 誠也

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