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Characterization of GaAs-Based Three-Branch Nanowire Junction Devices by Light-Induced Local Conductance Modulation Method

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/66634

Title: Characterization of GaAs-Based Three-Branch Nanowire Junction Devices by Light-Induced Local Conductance Modulation Method
Authors: Sato, Masaki Browse this author
Kasai, Seiya Browse this author →KAKEN DB
Issue Date: Jun-2013
Publisher: IOP Publishing
Journal Title: Japanese Journal of Applied Physics(JJAP)
Volume: 52
Issue: 6S
Start Page: 06GE08
Publisher DOI: 10.7567/JJAP.52.06GE08
Abstract: Nonlinear voltage transfer characteristics in GaAs-based three-branch nanowire junction (TBJ) devices were investigated by a light-induced local conductance modulation method. In this measurement system, the conductance in the device was locally increased by focused laser light irradiation. The nonlinear transfer curve was greatly changed when the laser light was irradiated on the positively biased branch. The conductance domain was found to exist at the end of the positively biased branch of the TBJ by scanning the light position. When a SiNx thin layer was deposited on the nanowire surface, the surface potential was increased and the nonlinearity in the transfer curve was reinforced simultaneously. The obtained results suggest that the asymmetric channel depletion model is appropriate for the observed nonlinearity mechanism in the GaAs TBJ at room temperature.
Rights: © 2013 The Japan Society of Applied Physics
Type: article (author version)
URI: http://hdl.handle.net/2115/66634
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 葛西 誠也

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