HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >
Research Center for Integrated Quantum Electronics >
Peer-reviewed Journal Articles, etc >

GaAs-Based Nanowire Devices with Multiple Asymmetric Gates for Electrical Brownian Ratchets

Files in This Item:
JJAP2013_52_MN12069.pdf1.13 MBPDFView/Open
Please use this identifier to cite or link to this item:

Title: GaAs-Based Nanowire Devices with Multiple Asymmetric Gates for Electrical Brownian Ratchets
Authors: Tanaka, Takayuki Browse this author →KAKEN DB
Nakano, Yuki Browse this author
Kasai, Seiya Browse this author →KAKEN DB
Issue Date: Jun-2013
Publisher: IOP Publishing
Journal Title: Japanese Journal of Applied Physics(JJAP)
Volume: 52
Issue: 6S
Start Page: 06GE07
Publisher DOI: 10.7567/JJAP.52.06GE07
Abstract: GaAs-based nanowire devices having multiple asymmetric gates for electrical Brownian ratchets were fabricated and characterized. From three-dimensional potential simulation results and current–voltage characteristics, we confirmed the formation of the asymmetric potential in our device design. Direct current was generated at room temperature by repeatedly switching the potential in a multiple-asymmetric-gate device on and off. Such current was not observed in either a single-asymmetric-gate device or a multiple-symmetric-gate device. The current direction and input frequency dependences of the net current indicated that the observed current was generated by the flashing-ratchet mechanism.
Rights: © 2013 The Japan Society of Applied Physics
Type: article (author version)
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 葛西 誠也

Export metadata:

OAI-PMH ( junii2 , jpcoar_1.0 )

MathJax is now OFF:


 - Hokkaido University