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High-temperature ultraviolet detection based on surface photovoltage effect in SiN passivated n-GaN films

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Title: High-temperature ultraviolet detection based on surface photovoltage effect in SiN passivated n-GaN films
Authors: Matys, M. Browse this author
Adamowicz, B. Browse this author
Zytkiewicz, Z. R. Browse this author
Taube, A. Browse this author
Kruszka, R. Browse this author
Piotrowska, A. Browse this author
Keywords: Ultraviolet light
III-V semiconductors
Interface structure
Issue Date: 1-Aug-2016
Publisher: American Institute of Physics (AIP)
Journal Title: Applied physics letters
Volume: 109
Issue: 5
Start Page: 051106
Publisher DOI: 10.1063/1.4960484
Abstract: We investigated the surface photovoltage (SPV) effect in n-GaN layers passivated with various insulators, i.e., Al2O3, SiO2, and SiN for ultraviolet (UV) light detection. We revealed that SPV in SiN/GaN shows markedly different behaviour than in oxide/GaN, i.e., the photo-signal exhibited very fast response (1 s) and recovery (2 s) times, contrary to oxide/GaN, and it was thermally stable up to 523 K. Furthermore, SPV spectra for SiN/GaN showed a sharp cut-off edge directly corresponding to the GaN band gap. We explained these results in terms of the different band structure of SiN/GaN and oxide/GaN junctions. All the observed properties of SPV response from SiN/GaN indicate that this relatively simple system can be applied to sensitive high temperature visible-blind UV detection. Published by AIP Publishing.
Rights: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Appl. Phys. Lett. 109, 051106 (2016) and may be found at
Type: article
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: Maciej Franciszek Matys

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