HUSCAP logo Hokkaido Univ. logo

Hokkaido University Collection of Scholarly and Academic Papers >
量子集積エレクトロニクス研究センター  >
雑誌発表論文等  >

Insulated gate and surface passivation structures for GaN-based power transistors

この資料はクリエイティブ・コモンズ・ライセンスの下で公開されています。

フルテキスト
JPD-2016.pdf2.56 MBPDF見る/開く
この文献へのリンクには次のURLを使用してください:http://hdl.handle.net/2115/67317

タイトル: Insulated gate and surface passivation structures for GaN-based power transistors
著者: Yatabe, Zenji 著作を一覧する
Asubar, Joel T 著作を一覧する
Hashizume, Tamotsu 著作を一覧する
キーワード: AlGaN
GaN
HEMT
MIS structure
C-V
interface state
発行日: 2016年 9月 7日
出版者: IOP Publishing
誌名: Journal of Physics D: Applied Physics
巻: 49
号: 39
開始ページ: 393001
出版社 DOI: 10.1088/0022-3727/49/39/393001
抄録: Recent years have witnessed GaN-based devices delivering their promise of unprecedented power and frequency levels and demonstrating their capability as an able replacement for Si-based devices. High-electron-mobility transistors (HEMTs), a key representative architecture of GaN-based devices, are well-suited for high-power and high frequency device applications, owing to highly desirable III-nitride physical properties. However, these devices are still hounded by issues not previously encountered in their more established Si- and GaAs-based devices counterparts. Metal–insulator–semiconductor (MIS) structures are usually employed with varying degrees of success in sidestepping the major problematic issues such as excessive leakage current and current instability. While different insulator materials have been applied to GaN-based transistors, the properties of insulator/III-N interfaces are still not fully understood. This is mainly due to the difficulty of characterizing insulator/AlGaN interfaces in a MIS HEMT because of the two resulting interfaces: insulator/AlGaN and AlGaN/GaN, making the potential modulation rather complicated. Although there have been many reports of low interface-trap densities in HEMT MIS capacitors, several papers have incorrectly evaluated their capacitance–voltage (C–V) characteristics. A HEMT MIS structure typically shows a 2-step C–V behavior. However, several groups reported C–V curves without the characteristic step at the forward bias regime, which is likely to the high-density states at the insulator/AlGaN interface impeding the potential control of the AlGaN surface by the gate bias. In this review paper, first we describe critical issues and problems including leakage current, current collapse and threshold voltage instability in AlGaN/GaN HEMTs. Then we present interface properties, focusing on interface states, of GaN MIS systems using oxides, nitrides and high-κ dielectrics. Next, the properties of a variety of AlGaN/GaN MIS structures as well as different characterization methods, including our own photo-assisted C–V technique, essential for understanding and developing successful surface passivation and interface control schemes, are given in the subsequent section. Finally we highlight the important progress in GaN MIS interfaces that have recently pushed the frontier of nitride-based device technology.
資料タイプ: article
URI: http://hdl.handle.net/2115/67317
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 橋詰 保

 

本サイトに関するご意見・お問い合わせは repo at lib.hokudai.ac.jp へお願いします。 - 北海道大学