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State of the art on gate insulation and surface passivation for GaN-based power HEMTs

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Title: State of the art on gate insulation and surface passivation for GaN-based power HEMTs
Authors: Hashizume, Tamotsu Browse this author →KAKEN DB
Nishiguchi, Kenya Browse this author
Kaneki, Shota Browse this author
Kuzmik, Jan Browse this author
Yatabe, Zenji Browse this author
Keywords: GaN
Surface passivation
Interface states
Issue Date: May-2018
Publisher: Elsevier
Journal Title: Materials science in semiconductor processing
Volume: 78
Start Page: 85
End Page: 95
Publisher DOI: 10.1016/j.mssp.2017.09.028
Abstract: In this article, we review recent progress on AlGaN/GaN and InAlN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride dielectrics, SiO2 and high-k dielectrics. Although GaN MIS-HEMTs have been suffering from the instability of threshold voltage (V-TH), recent interface technologies using in-situ SiNx and surface oxidation of (Al)GaN achieved excellent DC and dynamic performances of GaN MIS-HEMTs with stable V-TH. Furthermore, a new design of the gate dielectric such as a nanolaminate structure has been applied to GaN HEMTs. GaN-based MIS-HEMTs sometimes showed sudden current saturation at forward gate bias, and we discuss effects of electronic states at insulator-semiconductor interfaces on current linearity of GaN MIS-HEMTs. Finally, we present effective surface passivation schemes in conjunction with field-plate structures and emerging device structures utilizing multi nanochannels under the gate region.
Type: article
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 橋詰 保

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