|
Hokkaido University Collection of Scholarly and Academic Papers >
Research Center for Integrated Quantum Electronics >
Peer-reviewed Journal Articles, etc >
State of the art on gate insulation and surface passivation for GaN-based power HEMTs
This item is licensed under:Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International
| Title: | State of the art on gate insulation and surface passivation for GaN-based power HEMTs |
| Authors: | Hashizume, Tamotsu Browse this author →KAKEN DB | | Nishiguchi, Kenya Browse this author | | Kaneki, Shota Browse this author | | Kuzmik, Jan Browse this author | | Yatabe, Zenji Browse this author |
| Keywords: | GaN | | AlGaN | | InAlN | | HEMT | | MIS | | MOS | | Surface passivation | | Interface states |
| Issue Date: | May-2018 |
| Publisher: | Elsevier |
| Journal Title: | Materials science in semiconductor processing |
| Volume: | 78 |
| Start Page: | 85 |
| End Page: | 95 |
| Publisher DOI: | 10.1016/j.mssp.2017.09.028 |
| Abstract: | In this article, we review recent progress on AlGaN/GaN and InAlN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride dielectrics, SiO2 and high-k dielectrics. Although GaN MIS-HEMTs have been suffering from the instability of threshold voltage (V-TH), recent interface technologies using in-situ SiNx and surface oxidation of (Al)GaN achieved excellent DC and dynamic performances of GaN MIS-HEMTs with stable V-TH. Furthermore, a new design of the gate dielectric such as a nanolaminate structure has been applied to GaN HEMTs. GaN-based MIS-HEMTs sometimes showed sudden current saturation at forward gate bias, and we discuss effects of electronic states at insulator-semiconductor interfaces on current linearity of GaN MIS-HEMTs. Finally, we present effective surface passivation schemes in conjunction with field-plate structures and emerging device structures utilizing multi nanochannels under the gate region. |
| Rights: | https://creativecommons.org/licenses/by-nc-nd/4.0/ |
| Type: | article |
| URI: | http://hdl.handle.net/2115/68840 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
|
Submitter: 橋詰 保
|
