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引き下げ法によるLi2B4O7単結晶の育成とその評価
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| Title: | 引き下げ法によるLi2B4O7単結晶の育成とその評価 |
| Other Titles: | Growth of Li2B4O7 Single Crystals by a Pulling-Down Method |
| Authors: | 北川, 高郎1 Browse this author | | 樋口, 幹雄2 Browse this author →KAKEN DB | | 小平, 紘平3 Browse this author |
| Authors(alt): | Kitagawa, Takao1 | | Higuchi, Mikio2 | | Kodaira, Kohei3 |
| Keywords: | Li2B4O7 | | Single crystal | | Pulling-down method |
| Issue Date: | 1-Jul-1997 |
| Publisher: | Ceramic Society of Japan |
| Journal Title: | Journal of the Ceramic Society of Japan |
| Journal Title(alt): | 日本セラミックス協会学術論文誌 |
| Volume: | 105 |
| Issue: | 1223 |
| Start Page: | 616 |
| End Page: | 619 |
| Publisher DOI: | 10.2109/jcersj.105.616 |
| Abstract: | Bubble-free, transparent Li2B4O7 single crystals were grown by a newly developed pulling-down method. The use of a two-zone vertical furnace with a Pt-crucible realized a relatively steep temperature gradient of about 50°C/cm around the growth interface and a moderate gradient of about 13°C/cm below the interface, contributing to prevent grown crystals from cracking. Even at a pulling-down rate of 0.75mm/h, which is higher than that in the Czochralski growth, the formation of bubbles was effectively suppressed at a rotation rate of 25rpm. Any crystals grown along [110] direction involved no low-angle grain boundaries, but twinning was occasionally recognized. The dislocation density in the initial part of the crystal growth was found to be about 5×103/cm2 from an etch pit pattern, while X-ray topography of a vertical cross section revealed that the number of dislocation lines decreased as the growth proceeded. |
| Rights: | https://creativecommons.org/licenses/by-nd/4.0/deed.ja |
| Type: | article |
| URI: | http://hdl.handle.net/2115/73137 |
| Appears in Collections: | 工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 樋口 幹雄
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