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原料連続供給型引き下げ法によるルチル単結晶の育成

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Title: 原料連続供給型引き下げ法によるルチル単結晶の育成
Other Titles: Growth of rutile single crystals by the pulling-down method with continuous feeding
Authors: 樋口, 幹雄1 Browse this author →KAKEN DB
硎, 琢己2 Browse this author
小平, 紘平3 Browse this author
Authors(alt): Higuchi, M.1
Togi, T.2
Kodaira, K.3
Keywords: 結晶
Issue Date: 1-Jul-1998
Publisher: 日本結晶成長学会
Journal Title: 日本結晶成長学会誌
Journal Title(alt): Journal of the Japanese Association for Crystal Growth
Volume: 25
Issue: 3
Start Page: A1
Publisher DOI: 10.19009/jjacg.25.3_A1
Abstract: Rutile single crystals 25 mm in diameter were grown by a newly developed pulling-down method with continuous feeding. An iridium crucible was used as a rf-suscepter and a melt-supporting plate. The used of a heat-shielding plate made of porous zirconia was essential to perform smooth seed touch and stable growth run.
Description: 14aA1
Rights: 著作権は日本結晶成長学会にある。
Type: proceedings
URI: http://hdl.handle.net/2115/73407
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 樋口 幹雄

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