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Title: 有機半導体のグラフォエピタキシー
Other Titles: Graphoepitaxy of organic semiconductor
Authors: 池田, 進1 Browse this author
和田, 恭雄2 Browse this author
稲葉, 克彦3 Browse this author
寺嶋, 和夫4 Browse this author
島田, 敏宏5 Browse this author →KAKEN DB
斉木, 幸一朗6 Browse this author
Authors(alt): Ikeda, Susumu1
Wada, Yasuo2
Inaba, Katsuhiko3
Terashima, Kazuo4
Shimada, Toshihiro5
Saiki, Koichiro6
Keywords: 電子デバイス
Issue Date: 2008
Publisher: 日本結晶成長学会
Journal Title: 日本結晶成長学会誌
Journal Title(alt): Journal of the Japanese Association for Crystal Growth
Volume: 35
Issue: 4
Start Page: 243
End Page: 248
Publisher DOI: 10.19009/jjacg.35.4_243
Abstract: Organic semiconductors have attracted much attention as key materials to realize plastic electronics, and thin film transistors (TFTs) using organic semiconductors are present target in this research field. However, randomly oriented polycrystalline films grown on amorphous gate insulator show a much lower carrier mobility than that of single crystals and this is one of the problems to make organic TFTs. To improve the mobility, control of in-plane orientation of the thin films on amorphous substrates is required. In this review, the concept of "graphoepitaxy" is introduced as a way to control the in-plane orientation, and application of graphoepitaxy to organic semiconductor sexithiophene is reported.
Rights: 著作権は日本結晶成長学会にある。
Type: article
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 島田 敏宏

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