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Communication-Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect

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Title: Communication-Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect
Authors: Toguchi, Masachika Browse this author
Miwa, Kazuki Browse this author
Sato, Taketomo Browse this author →KAKEN DB
Keywords: Etching - Electrochemical
electrochemical etching
gallium nitride
sub-bandgap absorption
Issue Date: 15-Jul-2019
Publisher: The Electrochemical Society (ECS)
Journal Title: Journal of the electrochemical society
Volume: 166
Issue: 12
Start Page: H510
End Page: H512
Publisher DOI: 10.1149/2.0551912jes
Abstract: Anisotropic electrochemical etching of porous GaN structures by utilizing charge carriers generated by sub-bandgap absorption has been developed. Sub-bandgap light with a photon energy below the bandgap energy was transmitted through bulk GaN, but a certain type of photo-absorption additively occurred at the pore tip due to the Franz-Keldysh effect. The photocurrents observed when the reverse bias was applied to n-GaN were well reproduced by calculation taking into account the Frantz-Keldysh effect. The pore diameter was not changed that much, but the pore depth could be successfully controlled by the intensity and irradiation time of the sub-bandgap light. (C) The Author(s) 2019. Published by ECS.
Rights: https://creativecommons.org/licenses/by/4.0/
Type: article
URI: http://hdl.handle.net/2115/75274
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

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