Communication-Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect

Toguchi, Masachika; Miwa, Kazuki; Sato, Taketomo

doi:10.1149/2.0551912jes


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Communication-Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect

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Title:	Communication-Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect
Authors:	Toguchi, Masachika Browse this author
	Miwa, Kazuki Browse this author
	Sato, Taketomo Browse this author →KAKEN DB
Keywords:	Etching - Electrochemical
	electrochemical etching
	gallium nitride
	sub-bandgap absorption
Issue Date:	15-Jul-2019
Publisher:	The Electrochemical Society (ECS)
Journal Title:	Journal of the electrochemical society
Volume:	166
Issue:	12
Start Page:	H510
End Page:	H512
Publisher DOI:	10.1149/2.0551912jes
Abstract:	Anisotropic electrochemical etching of porous GaN structures by utilizing charge carriers generated by sub-bandgap absorption has been developed. Sub-bandgap light with a photon energy below the bandgap energy was transmitted through bulk GaN, but a certain type of photo-absorption additively occurred at the pore tip due to the Franz-Keldysh effect. The photocurrents observed when the reverse bias was applied to n-GaN were well reproduced by calculation taking into account the Frantz-Keldysh effect. The pore diameter was not changed that much, but the pore depth could be successfully controlled by the intensity and irradiation time of the sub-bandgap light. (C) The Author(s) 2019. Published by ECS.
Rights:	https://creativecommons.org/licenses/by/4.0/
Type:	article
URI:	http://hdl.handle.net/2115/75274
Appears in Collections:	量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

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