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Effects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN
| Title: | Effects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN |
| Authors: | Matsumoto, Satoru Browse this author | | Toguchi, Masachika Browse this author | | Takeda, Kentaro Browse this author | | Narita, Tetsuo Browse this author | | Kachi, Tetsu Browse this author | | Sato, Taketomo Browse this author →KAKEN DB |
| Issue Date: | Dec-2018 |
| Publisher: | IOP Publishing |
| Journal Title: | Japanese Journal of Applied Physics (JJAP) |
| Volume: | 57 |
| Issue: | 12 |
| Start Page: | 121001 |
| Publisher DOI: | 10.7567/JJAP.57.121001 |
| Abstract: | We investigated the ability of a photo-assisted electrochemical (PEC) etching process to remove the damage that dry etching causes in the near-surface region of GaN samples. The process consists of anodic oxidation of the GaN surface and subsequent dissolution of the oxide with a chemical treatment, and the extent of the PEC reactions depends on the total charge density transferred in them. The PEC process was conducted for samples prepared with various dry-etching conditions followed by fabrication of Schottky barrier diodes (SBDs) and metal-insulatorsemiconductor (MIS) capacitors. The PEC process greatly improved the barrier height, ideality factor, and reverse leakage current of SBDs. Capacitance-voltage measurements of MIS capacitors revealed that the densities of interface states and discrete traps were both reduced by the PEC process. The results obtained here show that the PEC process can remove dry-etching damage from the GaN surface. (C) 2018 The Japan Society of Applied Physics |
| Rights: | ©2018 The Japan Society of Applied Physics |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/76058 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 佐藤 威友
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