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Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices

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Title: Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices
Authors: Horikiri, Fumimasa Browse this author
Fukuhara, Noboru Browse this author
Ohta, Hiroshi Browse this author
Asai, Naomi Browse this author
Narita, Yoshinobu Browse this author
Yoshida, Takehiro Browse this author
Mishima, Tomoyoshi Browse this author
Toguchi, Masachika Browse this author
Miwa, Kazuki Browse this author
Sato, Taketomo Browse this author →KAKEN DB
Keywords: Gallium nitride
etching
photoelectrochemistry
trench fabrication
recess
power devices
Issue Date: Nov-2019
Publisher: IEEE
Institute of Electrical and Electronics Engineers
Journal Title: IEEE transactions on semiconductor manufacturing
Volume: 32
Issue: 4
Start Page: 489
End Page: 495
Publisher DOI: 10.1109/TSM.2019.2944844
Abstract: Photoelectrochemical (PEC) etching was used to fabricate deep trench structures in GaN-on-GaN epilayers grown on n-GaN substrates. The width of the side etching was less than 1 mu m, with high accuracy. The aspect ratio (depth/width) of a 3.3-mu m-wide trench with a PEC etching depth of 24.3 mu m was 7.3. These results demonstrate the excellent potential of PEC etching for fabricating deep trenches in vertical GaN devices. Furthermore, we simplified the PEC etching technology to permit its use in a wafer-scale process. We also demonstrated simple contactless PEC etching technologies for the manufacture of power and RF devices. A trench structure was fabricated in a GaN-on-GaN epilayer by simple contactless PEC etching. The role of the cathodic reaction in contactless PEC etching is discussed in relation to the application of a GaN HEMT epilayer on a semi-insulating substrate. Fortunately, the GaN HEMT structure contains an ohmic electrode that can act as a cathode in contactless PEC etching, thereby permitting the recess etching of a GaN HEMT epilayer grown on a semi-insulating SiC substrate. These results indicate that PEC etching technologies are becoming suitable for use in the fabrication of practical GaN power and RF devices.
Rights: © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Type: article (author version)
URI: http://hdl.handle.net/2115/76692
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐藤 威友

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