| Title: | Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices |
| Authors: | Horikiri, Fumimasa Browse this author |
| Fukuhara, Noboru Browse this author |
| Ohta, Hiroshi Browse this author |
| Asai, Naomi Browse this author |
| Narita, Yoshinobu Browse this author |
| Yoshida, Takehiro Browse this author |
| Mishima, Tomoyoshi Browse this author |
| Toguchi, Masachika Browse this author |
| Miwa, Kazuki Browse this author |
| Sato, Taketomo Browse this author →KAKEN DB |
| Keywords: | Gallium nitride |
| etching |
| photoelectrochemistry |
| trench fabrication |
| recess |
| power devices |
| Issue Date: | Nov-2019 |
| Publisher: | IEEE |
| Institute of Electrical and Electronics Engineers |
| Journal Title: | IEEE transactions on semiconductor manufacturing |
| Volume: | 32 |
| Issue: | 4 |
| Start Page: | 489 |
| End Page: | 495 |
| Publisher DOI: | 10.1109/TSM.2019.2944844 |
| Abstract: | Photoelectrochemical (PEC) etching was used to fabricate deep trench structures in GaN-on-GaN epilayers grown on n-GaN substrates. The width of the side etching was less than 1 mu m, with high accuracy. The aspect ratio (depth/width) of a 3.3-mu m-wide trench with a PEC etching depth of 24.3 mu m was 7.3. These results demonstrate the excellent potential of PEC etching for fabricating deep trenches in vertical GaN devices. Furthermore, we simplified the PEC etching technology to permit its use in a wafer-scale process. We also demonstrated simple contactless PEC etching technologies for the manufacture of power and RF devices. A trench structure was fabricated in a GaN-on-GaN epilayer by simple contactless PEC etching. The role of the cathodic reaction in contactless PEC etching is discussed in relation to the application of a GaN HEMT epilayer on a semi-insulating substrate. Fortunately, the GaN HEMT structure contains an ohmic electrode that can act as a cathode in contactless PEC etching, thereby permitting the recess etching of a GaN HEMT epilayer grown on a semi-insulating SiC substrate. These results indicate that PEC etching technologies are becoming suitable for use in the fabrication of practical GaN power and RF devices. |
| Rights: | © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/76692 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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