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Electrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O82- ions

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Title: Electrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O82- ions
Authors: Toguchi, Masachika Browse this author
Miwa, Kazuki Browse this author
Horikiri, Fumimasa Browse this author
Fukuhara, Noboru Browse this author
Narita, Yoshinobu Browse this author
Yoshida, Takehiro Browse this author
Sato, Taketomo Browse this author →KAKEN DB
Issue Date: Jun-2019
Publisher: IOP Publishing
Journal Title: Applied Physics Express
Volume: 12
Issue: 6
Start Page: 066504
Publisher DOI: 10.7567/1882-0786/ab21a1
Abstract: Electrodeless photo-assisted electrochemical etching was successfully demonstrated using a H-3 PO4-based solution containing S2O82- ions. The pH value of the solution changed under UVC illumination, clearly showing that SO4- radicals were produced from S2O82- ions by absorbing UVC light. The production rate of SO4- radicals maintained a constant value over the wide pH range of the solution, leading to etching rates and surface roughness comparable to those obtained in KOH-based solutions. The positive-type photoresist was applicable as the etching mask for the H3PO4-based solution. This finding will contribute to the development of a simple wet etching process suitable for the manufacturing of GaN-based devices.
Rights: © 2019 The Japan Society of Applied Physics
Type: article (author version)
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐藤 威友

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