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Electrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O82- ions
| Title: | Electrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O82- ions |
| Authors: | Toguchi, Masachika Browse this author | | Miwa, Kazuki Browse this author | | Horikiri, Fumimasa Browse this author | | Fukuhara, Noboru Browse this author | | Narita, Yoshinobu Browse this author | | Yoshida, Takehiro Browse this author | | Sato, Taketomo Browse this author →KAKEN DB |
| Issue Date: | Jun-2019 |
| Publisher: | IOP Publishing |
| Journal Title: | Applied Physics Express |
| Volume: | 12 |
| Issue: | 6 |
| Start Page: | 066504 |
| Publisher DOI: | 10.7567/1882-0786/ab21a1 |
| Abstract: | Electrodeless photo-assisted electrochemical etching was successfully demonstrated using a H-3 PO4-based solution containing S2O82- ions. The pH value of the solution changed under UVC illumination, clearly showing that SO4- radicals were produced from S2O82- ions by absorbing UVC light. The production rate of SO4- radicals maintained a constant value over the wide pH range of the solution, leading to etching rates and surface roughness comparable to those obtained in KOH-based solutions. The positive-type photoresist was applicable as the etching mask for the H3PO4-based solution. This finding will contribute to the development of a simple wet etching process suitable for the manufacturing of GaN-based devices. |
| Rights: | © 2019 The Japan Society of Applied Physics |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/78270 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 佐藤 威友
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