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Self-termination of contactless photo-electrochemical (PEC) etching on aluminum gallium nitride/gallium nitride heterostructures
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| Title: | Self-termination of contactless photo-electrochemical (PEC) etching on aluminum gallium nitride/gallium nitride heterostructures |
| Authors: | Miwa, Kazuki Browse this author | | Komatsu, Yuto Browse this author | | Toguchi, Masachika Browse this author | | Horikiri, Fumimasa Browse this author | | Fukuhara, Noboru Browse this author | | Narita, Yoshinobu Browse this author | | Ichikawa, Osamu Browse this author | | Isono, Ryota Browse this author | | Tanaka, Takeshi Browse this author | | Sato, Taketomo Browse this author →KAKEN DB |
| Issue Date: | 1-Feb-2020 |
| Publisher: | IOP Publishing |
| Journal Title: | Applied Physics Express (APEX) |
| Volume: | 13 |
| Issue: | 2 |
| Start Page: | 026508 |
| Publisher DOI: | 10.35848/1882-0786/ab6f28 |
| Abstract: | Contactless photo-electrochemical (PEC) etching was successfully demonstrated on AlGaN/GaN heterostructures using a K2S2O8 aqueous solution. The etching was conducted by a simple method such as just dipping the sample with Ti-cathode pads into the solution under UVC illumination. The etching morphology of the AlGaN surface was very smooth with an root mean square roughness of 0.24 nm. The etching was self-terminated in the AlGaN layer, whose residual thickness was 5 nm uniformly throughout the etched region. These contactless PEC etching features are promising for the fabrication of recessed-gate AlGaN/GaN high-electron-mobility transistors with high recessed-gate thickness reproducibility. (C) 2020 The Japan Society of Applied Physics |
| Rights: | ©2000 The Japan Society of Applied Physics | | https://creativecommons.org/licenses/by/4.0/ |
| Type: | article |
| URI: | http://hdl.handle.net/2115/79172 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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