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Electronic transmission in the lateral heterostructure of semiconducting and metallic transition-metal dichalcogenide monolayers

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Title: Electronic transmission in the lateral heterostructure of semiconducting and metallic transition-metal dichalcogenide monolayers
Authors: Habe, Tetsuro Browse this author
Issue Date: 28-Sep-2019
Publisher: American Institute of Physics (AIP)
Journal Title: Journal of Applied Physics
Volume: 126
Issue: 12
Start Page: 123901
Publisher DOI: 10.1063/1.5098802
Abstract: We investigate the electronic transport property of lateral heterojunctions of semiconducting and metallic transition-metal dichalcogenide monolayers, MoSe2 and NbSe2, respectively. We calculate the electronic transmission probability by using a multiorbital tight-binding model based on the first-principles band structure. The transmission probability depends on the spin and valley degrees of freedom. This dependence qualitatively changes by the interface structure. The heterostructure with a zigzag interface preserves the spin and the valley of electrons in the transmission process. On the other hand, the armchair interface enables conduction electrons to transmit with changing the valley and increases the conductance in the hole-doped junctions due to the valley-flip transmission. We also discuss the spin and valley polarizations of electronic current in the heterojunctions.
Rights: The following article appeared in Journal of Applied Physics 126, 123901 (2019) and may be found at https://doi.org/10.1063/1.5098802.
Type: article
URI: http://hdl.handle.net/2115/79315
Appears in Collections:工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 羽部 哲朗

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