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Control of plasma-CVD SiO2/InAlN interface by N2O plasma oxidation
| Title: | Control of plasma-CVD SiO2/InAlN interface by N2O plasma oxidation |
| Authors: | Akazawa, Masamichi Browse this author →KAKEN DB | | Kitajima, Shouhei Browse this author | | Kitawaki, Yuya Browse this author |
| Issue Date: | 1-Oct-2019 |
| Publisher: | IOP Publishing |
| Journal Title: | Japanese Journal of Applied Physics (JJAP) |
| Volume: | 58 |
| Issue: | 10 |
| Start Page: | 106504 |
| Publisher DOI: | 10.7567/1347-4065/ab3c49 |
| Abstract: | Control of the plasma-CVD SiO2/InAlN interface by N2O plasma oxidation of the InAlN surface was studied. The interface was characterized by both X-ray photoelectron spectroscopy (XPS) and capacitance-voltage measurement of metal-insulator-semiconductor (MIS) diodes. An excessively long duration of oxidation led to the deterioration of the stoichiometry of the InAlN surface and plasma oxide, resulting in a high-density of interface states in the completed MIS diodes. Meanwhile, the surface-localized oxygen deficiency in the plasma oxide layer was observed by XPS. The intensity ratio of the oxygen-deficient component to the fully oxidized component in the O 1s spectrum decreased with increasing oxidation duration. Consequently, there was an optimum oxidation duration. The interface state density was reduced by almost one order in the case of plasma oxidation for an appropriate duration compared with the case of the direct deposition of SiO2 onto InAlN. (C) 2019 The Japan Society of Applied Physics |
| Rights: | © 2019 The Japan Society of Applied Physics |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/79367 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 赤澤 正道
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