Spin-orbit torque induced magnetization switching for an ultrathin MnGa/Co2MnSi bilayer

Jono, Kohey; Shimohashi, Fumiaki; Yamanouchi, Michihiko; Uemura, Tetsuya

doi:10.1063/5.0032732


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Spin-orbit torque induced magnetization switching for an ultrathin MnGa/Co2MnSi bilayer

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Title:	Spin-orbit torque induced magnetization switching for an ultrathin MnGa/Co2MnSi bilayer
Authors:	Jono, Kohey Browse this author
	Shimohashi, Fumiaki Browse this author
	Yamanouchi, Michihiko Browse this author →KAKEN DB
	Uemura, Tetsuya Browse this author →KAKEN DB
Issue Date:	1-Feb-2021
Publisher:	American Institute of Physics (AIP)
Journal Title:	AIP Advances
Volume:	11
Issue:	2
Start Page:	025205
Publisher DOI:	10.1063/5.0032732
Abstract:	We investigated spin-orbit torque (SOT) induced magnetization switching and SOT efficiency for Mn1.8Ga1.0 (MnGa) single layers and MnGa/Co2MnSi (CMS) bilayers. Magnetization measurements showed that ultrathin MnGa and CMS were antiferromagnetically coupled to each other with clear perpendicular magnetization. SOT-induced magnetization switching was observed for both MnGa/CMS/Ta and MnGa/Ta stacks, and the switching current was reduced by a half in the MnGa/CMS/Ta stack. Examination of SOT acting on the domain walls revealed that the effective magnetic field originating from the SOT was approximately five times stronger in the MnGa/CMS/Ta stack than in the MnGa/Ta stack. These results indicate that the MnGa/CMS bilayer structure is effective in enhancing the efficiency of SOT generation.
Rights:	Tetsuya Uemura, AIP Advances 11, 025205 (2021); licensed under a Creative Commons Attribution (CC BY) license.
Rights:	https://creativecommons.org/licenses/by/4.0/
Type:	article
URI:	http://hdl.handle.net/2115/81338
Appears in Collections:	情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

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