Fabrication of GaN nanowires containing n(+)-doped top layer by wet processes using electrodeless photo-assisted electrochemical etching and alkaline solution treatment

Shimauchi, Michihito; Miwa, Kazuki; Toguchi, Masachika; Sato, Taketomo; Motohisa, Junichi

doi:10.35848/1882-0786/ac2d45


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Fabrication of GaN nanowires containing n(+)-doped top layer by wet processes using electrodeless photo-assisted electrochemical etching and alkaline solution treatment

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Title:	Fabrication of GaN nanowires containing n(+)-doped top layer by wet processes using electrodeless photo-assisted electrochemical etching and alkaline solution treatment
Authors:	Shimauchi, Michihito Browse this author
	Miwa, Kazuki Browse this author
	Toguchi, Masachika Browse this author
	Sato, Taketomo Browse this author →KAKEN DB
	Motohisa, Junichi Browse this author →KAKEN DB
Keywords:	GaN
	Electrochemial etching
	nanowire
Issue Date:	1-Nov-2021
Publisher:	IOP Publishing
Journal Title:	Applied Physics Express (APEX)
Volume:	14
Issue:	11
Start Page:	111003
Publisher DOI:	10.35848/1882-0786/ac2d45
Abstract:	We attempted to fabricate GaN nanowires by electrodeless photo-assisted electrochemical (PEC) etching and successive alkaline solution treatment. The sample consisting of n(+)-doped and unintentionally doped GaN grown on a GaN substrate was selectively etched using a Ti mask in a mixed solution of K2S2O8 and KOH under UV light radiation. This specific layer structure required a relatively concentrated KOH solution for etching. The PEC etching resulted in the formation of a tapered cone structure of GaN with its top diameter determined by the mask size. Successive KOH treatment after PEC etching yielded GaN nanowires with diameters of about 220 nm.
Rights:	©2021 The Japan Society of Applied Physics
Type:	article
URI:	http://hdl.handle.net/2115/83317
Appears in Collections:	情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

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