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Fabrication of GaAs-based integrated half and full adders by novel hexagonal BDD quantum circuit approach

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タイトル: Fabrication of GaAs-based integrated half and full adders by novel hexagonal BDD quantum circuit approach
著者: Seiya, Kasai 著作を一覧する
Yumoto, Miki 著作を一覧する
Hasegawa, Hideki 著作を一覧する
発行日: 2003年 2月
出版者: Elsevier
誌名: Solid-State Electronics
巻: 47
号: 2
開始ページ: 199
終了ページ: 204
出版社 DOI: 10.1016/S0038-1101(02)00195-8
抄録: Feasibility of a novel hexagonal binary decision diagram (BDD) quantum circuit approach based on Schottky wrap gate (WPG) control of GaAs/AlGaAs hexagonal nanowire network has been demonstrated through fabrication of half adders and full adders. Quantum BDD node devices were designed and realized utilizing WPG-controlled quantum wire (QWR) and single electron (SE) switches. BDD half sum and carry elements of a half adder were fabricated by integrating the WPG BDD node devices and they operated correctly through either quantum transport at low temperature or many electron classical transport at room temperature. Successful design of hexagonal BDD full adders for arbitrary bits on a hexagonal network without nanowire crossover and fabrication of QWR-based BDD 2-bit full adder on the AlGaAs/GaAs etched hexagonal nanowire network with node density of 10^7 cm^-2 clearly indicated the capability of the present approach for large scale quantum device integration.
Description URI: http://www.sciencedirect.com/science/journal/00381101
資料タイプ: article (author version)
URI: http://hdl.handle.net/2115/8358
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 葛西 誠也

 

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