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Fabrication of GaAs-based integrated half and full adders by novel hexagonal BDD quantum circuit approach

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/8358

Title: Fabrication of GaAs-based integrated half and full adders by novel hexagonal BDD quantum circuit approach
Authors: Seiya, Kasai Browse this author →KAKEN DB
Yumoto, Miki Browse this author
Hasegawa, Hideki Browse this author
Issue Date: Feb-2003
Publisher: Elsevier
Journal Title: Solid-State Electronics
Volume: 47
Issue: 2
Start Page: 199
End Page: 204
Publisher DOI: 10.1016/S0038-1101(02)00195-8
Abstract: Feasibility of a novel hexagonal binary decision diagram (BDD) quantum circuit approach based on Schottky wrap gate (WPG) control of GaAs/AlGaAs hexagonal nanowire network has been demonstrated through fabrication of half adders and full adders. Quantum BDD node devices were designed and realized utilizing WPG-controlled quantum wire (QWR) and single electron (SE) switches. BDD half sum and carry elements of a half adder were fabricated by integrating the WPG BDD node devices and they operated correctly through either quantum transport at low temperature or many electron classical transport at room temperature. Successful design of hexagonal BDD full adders for arbitrary bits on a hexagonal network without nanowire crossover and fabrication of QWR-based BDD 2-bit full adder on the AlGaAs/GaAs etched hexagonal nanowire network with node density of 10^7 cm^-2 clearly indicated the capability of the present approach for large scale quantum device integration.
Description URI: http://www.sciencedirect.com/science/journal/00381101
Type: article (author version)
URI: http://hdl.handle.net/2115/8358
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 葛西 誠也

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