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GaAs and InGaAs Single Electron Hexagonal Nanowire Circuits Based on Binary Decision Diagram Logic Architecture
| Title: | GaAs and InGaAs Single Electron Hexagonal Nanowire Circuits Based on Binary Decision Diagram Logic Architecture |
| Authors: | Kasai, Seiya Browse this author →KAKEN DB | | Hasegawa, Hideki Browse this author |
| Keywords: | GaAs | | InGaAs | | Hexagonal nanowire network | | BDD | | Single electron circuit |
| Issue Date: | Mar-2002 |
| Publisher: | Elsevier |
| Journal Title: | Physica E: Low-dimensional Systems and Nanostructures |
| Volume: | 13 |
| Issue: | 2-4 |
| Start Page: | 925 |
| End Page: | 929 |
| Publisher DOI: | 10.1016/S1386-9477(02)00236-9 |
| Abstract: | The feasibility of a novel approach for single electron quantum LSIs (Q-LSIs) is investigated. It is based on the binary-decision-diagram (BDD) logic architecture, using arrays of GaAs and InGaAs single electron BDD node devices formed on hexagonal nanowire networks. Single electron branch switches using nanometer-scale Schottky wrap gates (WPGs) on AlGaAs/GaAs etched nanowires and on InGaAs nanowires by selective MBE growth were fabricated. They showed clear conductance oscillation characteristics controlled by a single electron lateral resonant tunneling. Successful design and fabrication of GaAs-based single electron BDD node devices and circuits including OR logic elements and a 2 bit adder indicates basic feasibility of realizing single electron Q-LSIs by the novel approach. |
| Relation: | http://www.sciencedirect.com/science/journal/13869477 |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/8359 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 葛西 誠也
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