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GaAs quantum wire transistors and single electron transistors using Schottky wrap gates for quantum integrated circuits

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Title: GaAs quantum wire transistors and single electron transistors using Schottky wrap gates for quantum integrated circuits
Authors: Kasai, S. Browse this author
Satoh, Y. Browse this author
Hasegawa, H. Browse this author
Issue Date: 2000
Publisher: Institute of Physics
Citation: Compound semiconductors 1999 : proceedings of the Twenty-sixth International Symposium on Compound Semiconductors held in Berlin, Germany, 22-26 August 1999 / edited by K H Ploog, G Trankle and G Weimann
Journal Title: Institute of Physics conference series
Volume: 166
Start Page: 219
End Page: 222
Abstract: Basic electrical properties of Schottky wrap-gate (WPG) controlled GaAs quantum wire transistors (QWTrs) and single electron transistors (SETs) are investigated to clarify their applicability to future quantum integrated circuits. The fabricated WPG QWTrs showed excellent gate-control characteristics and conductance quantization, indicating that the WPG can produce a strong lateral confinement potential. The WPG SETs showed clear and high conductance peaks that were suitable for switching device application. A WPG SET-based inverter logic circuits combining a WPG QWTr active load with a WPG SET was fabricated and it showed a clear inverter action, whose inverter gain was in reasonable agreement with the voltage gain of the driver two-gate WPG SET estimated from the Coulomb diamond plot.
Conference Name: International Symposium on Compound Semiconductors
Conference Sequence: 26
Conference Place: Berlin
Rights: copyright (C) 2000 IOP Publishing Ltd.
Relation: http://www.iop.org
Type: proceedings (author version)
URI: http://hdl.handle.net/2115/8360
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 葛西 誠也

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