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Gate Controlled Conductance Oscillations in GaAs Schottky Wrap-Gate Single Electron Transistors

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/8367

Title: Gate Controlled Conductance Oscillations in GaAs Schottky Wrap-Gate Single Electron Transistors
Authors: Kasai, S. Browse this author
Hasegawa, H. Browse this author
Issue Date: 2001
Publisher: Springer
Citation: Proceedings of the 25th International Conference on the Physics of Semiconductors Part I / Part II
Journal Title: Springer Proceedings in Physics
Volume: 87
Issue: 2
Start Page: 1817
End Page: 1818
Abstract: Conductance oscillation characteristics of a Schottky wrap-gate controlled single electron transistor (WPG SET) were investigated. The device showed a small number of high conductance peaks and they were visible up to 30 K. These features were explained by a lateral single electron resonant tunneling. The line width of the resonant state was estimated to be 1.5 meV and indicated the strong coupling between dot and leads. In low temperatures where kT was much smaller than addition energy, the device showed an unusual temperature dependence of the peak width, whose behavior was different from that expected from the theory.
Conference Name: International Conference on the Physics of Semiconductors
Conference Sequence: 25
Conference Place: Osaka
Rights: The original publication is available at www.springerlink.com
Type: proceedings (author version)
URI: http://hdl.handle.net/2115/8367
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 葛西 誠也

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