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Gate Controlled Conductance Oscillations in GaAs Schottky Wrap-Gate Single Electron Transistors
| Title: | Gate Controlled Conductance Oscillations in GaAs Schottky Wrap-Gate Single Electron Transistors |
| Authors: | Kasai, S. Browse this author | | Hasegawa, H. Browse this author |
| Issue Date: | 2001 |
| Publisher: | Springer |
| Citation: | Proceedings of the 25th International Conference on the Physics of Semiconductors Part I / Part II |
| Journal Title: | Springer Proceedings in Physics |
| Volume: | 87 |
| Issue: | 2 |
| Start Page: | 1817 |
| End Page: | 1818 |
| Abstract: | Conductance oscillation characteristics of a Schottky wrap-gate controlled single electron transistor (WPG SET) were investigated. The device showed a small number of high conductance peaks and they were visible up to 30 K. These features were explained by a lateral single electron resonant tunneling. The line width of the resonant state was estimated to be 1.5 meV and indicated the strong coupling between dot and leads. In low temperatures where kT was much smaller than addition energy, the device showed an unusual temperature dependence of the peak width, whose behavior was different from that expected from the theory. |
| Conference Name: | International Conference on the Physics of Semiconductors |
| Conference Sequence: | 25 |
| Conference Place: | Osaka |
| Rights: | The original publication is available at www.springerlink.com |
| Type: | proceedings (author version) |
| URI: | http://hdl.handle.net/2115/8367 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 葛西 誠也
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