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GaAs Schottky Wrap-Gate Binary-Decision-Diagram Devices for Realization of Novel Single Electron Logic Architecture
| Title: | GaAs Schottky Wrap-Gate Binary-Decision-Diagram Devices for Realization of Novel Single Electron Logic Architecture |
| Authors: | Kasai, Seiya Browse this author | | Amemiya, Yoshihito Browse this author | | Hasegawa, Hideki Browse this author |
| Issue Date: | 2000 |
| Publisher: | IEEE |
| Citation: | International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat.No.00CH37138), 2000, p.585-588 |
| Abstract: | Novel single electron binary-decision-diagram (BDD) node devices and circuits based on Schottky wrap-gate (WPG) control of AlGaAs/GaAs nanowires were designed, fabricated and characterized for the first time. The WPG BDD node device showed clear path switching as well as conductance oscillation by WPG voltage control. WPG-based BDD OR logic circuits were also successfully fabricated. It is also shown that more complex-functional BDD circuits can be realized by suitable layouts of WPGs and nanowires. |
| Conference Name: | International Electron Devices Meeting |
| Conference Sequence: | 2000 |
| Conference Place: | San Francisco, CA |
| Rights: | © 2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat.No.00CH37138), 2000, p.585-588 |
| Type: | proceedings (author version) |
| URI: | http://hdl.handle.net/2115/8369 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 葛西 誠也
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