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Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy

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タイトル: Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy
著者: Shiozaki, Nanako 著作を一覧する
Sato, Taketomo 著作を一覧する
Hasegawa, Hideki 著作を一覧する
発行日: 2005年 7月
出版者: American Vacuum Society
誌名: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
巻: 23
号: 4
開始ページ: 1714
終了ページ: 1721
出版社 DOI: 10.1116/1.1943446
抄録: Effects of surface states and surface passivation on photoluminescence (PL) properties of GaAs quantum wires (QWRs) are investigated. QWR samples were grown on (001) and (111)B substrates by the selective molecular beam epitaxy (MBE) method. For surface passivation, an ultrathin (about 1 nm) Si interface control layer (Si ICL) was grown by MBE as an interlayer. In both of the selectively grown QWRs on (001) and (111)B substrates, the PL intensity reduced exponentially with reduction of their wire-to-surface distance, being coexistent with a more gradual reduction due to carrier supply reduction. The exponential reduction was explained in terms of interaction between surface states and quantum confined states leading to tunneling assisted nonradiative recombination through surface states. Surface passivation by the Si-ICL method almost completely recovered PL intensities not only for QWRs on the (001) substrate, but also for QWRs on the (111)B substrate.
Rights: © 2005 American Vacuum Society
Relation (URI): http://scitation.aip.org/jvstb/
資料タイプ: article
URI: http://hdl.handle.net/2115/8382
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 佐藤 威友

 

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