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Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy

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Title: Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy
Authors: Shiozaki, Nanako Browse this author
Sato, Taketomo Browse this author →KAKEN DB
Hasegawa, Hideki Browse this author
Issue Date: Jul-2005
Publisher: American Vacuum Society
Journal Title: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Volume: 23
Issue: 4
Start Page: 1714
End Page: 1721
Publisher DOI: 10.1116/1.1943446
Abstract: Effects of surface states and surface passivation on photoluminescence (PL) properties of GaAs quantum wires (QWRs) are investigated. QWR samples were grown on (001) and (111)B substrates by the selective molecular beam epitaxy (MBE) method. For surface passivation, an ultrathin (about 1 nm) Si interface control layer (Si ICL) was grown by MBE as an interlayer. In both of the selectively grown QWRs on (001) and (111)B substrates, the PL intensity reduced exponentially with reduction of their wire-to-surface distance, being coexistent with a more gradual reduction due to carrier supply reduction. The exponential reduction was explained in terms of interaction between surface states and quantum confined states leading to tunneling assisted nonradiative recombination through surface states. Surface passivation by the Si-ICL method almost completely recovered PL intensities not only for QWRs on the (001) substrate, but also for QWRs on the (111)B substrate.
Rights: © 2005 American Vacuum Society
Relation: http://scitation.aip.org/jvstb/
Type: article
URI: http://hdl.handle.net/2115/8382
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐藤 威友

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