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Non-destructive evaluation of the strain distribution in selected-area He+ ion irradiated 4H-SiC

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Title: Non-destructive evaluation of the strain distribution in selected-area He+ ion irradiated 4H-SiC
Authors: Yang, Subing Browse this author
Tokunaga, Sakiko Browse this author
Kondo, Minako Browse this author
Nakagawa, Yuki Browse this author
Shibayama, Tamaki Browse this author →KAKEN DB
Keywords: Implantation
Electron backscattering diffraction (EBSD)
Raman spectroscopy
Residual strain
Issue Date: 15-Jan-2020
Publisher: Elsevier
Journal Title: Applied surface science
Volume: 500
Start Page: 144051
Publisher DOI: 10.1016/j.apsusc.2019.144051
Abstract: Residual strain in silicon carbide (SiC) greatly affects its physical and chemical properties and thus the performance of SiC-based devices. Herein, the detailed strain distribution in selected-area He+ ion-irradiated 4H-SiC was evaluated using the non-destructive techniques of electron backscattering diffraction and confocal Raman microscopy (CRM). In addition to the strain introduced in the irradiated area, excessive strain induced by irradiation-induced swelling also extended into the surrounding substrate. Furthermore, great compressive strain was concentrated around the interface between the irradiated and unirradiated areas. In the strain-introduced substrate, an A(1)(LO)/A(1)(LOPC) peak variation was detected by CRM, suggesting a variation of the carrier density.
Rights: © 2020. This manuscript version is made available under the CC-BY-NC-ND 4.0 license
Type: article (author version)
Appears in Collections:エネルギー・マテリアル融合領域研究センター (Center for Advanced Research of Energy and Material) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 柴山 環樹

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