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Non-destructive evaluation of the strain distribution in selected-area He+ ion irradiated 4H-SiC
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| Title: | Non-destructive evaluation of the strain distribution in selected-area He+ ion irradiated 4H-SiC |
| Authors: | Yang, Subing Browse this author | | Tokunaga, Sakiko Browse this author | | Kondo, Minako Browse this author | | Nakagawa, Yuki Browse this author | | Shibayama, Tamaki Browse this author →KAKEN DB |
| Keywords: | Implantation | | Electron backscattering diffraction (EBSD) | | Raman spectroscopy | | Residual strain |
| Issue Date: | 15-Jan-2020 |
| Publisher: | Elsevier |
| Journal Title: | Applied surface science |
| Volume: | 500 |
| Start Page: | 144051 |
| Publisher DOI: | 10.1016/j.apsusc.2019.144051 |
| Abstract: | Residual strain in silicon carbide (SiC) greatly affects its physical and chemical properties and thus the performance of SiC-based devices. Herein, the detailed strain distribution in selected-area He+ ion-irradiated 4H-SiC was evaluated using the non-destructive techniques of electron backscattering diffraction and confocal Raman microscopy (CRM). In addition to the strain introduced in the irradiated area, excessive strain induced by irradiation-induced swelling also extended into the surrounding substrate. Furthermore, great compressive strain was concentrated around the interface between the irradiated and unirradiated areas. In the strain-introduced substrate, an A(1)(LO)/A(1)(LOPC) peak variation was detected by CRM, suggesting a variation of the carrier density. |
| Rights: | © 2020. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ | | http://creativecommons.org/licenses/by-nc-nd/4.0/ |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/83831 |
| Appears in Collections: | エネルギー・マテリアル融合領域研究センター (Center for Advanced Research of Energy and Material) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 柴山 環樹
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