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Growth kinetics and modeling of selective molecular beam epitaxial growth of GaAs ridge quantum wires on pre-patterned nonplanar substrates

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Title: Growth kinetics and modeling of selective molecular beam epitaxial growth of GaAs ridge quantum wires on pre-patterned nonplanar substrates
Authors: Sato, Taketomo Browse this author
Tamai, Isao Browse this author
Hasegawa, Hideki Browse this author
Issue Date: Jul-2004
Publisher: American Vacuum Society
Journal Title: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Volume: 22
Issue: 4
Start Page: 2266
End Page: 2274
Publisher DOI: 10.1116/1.1773841
Abstract: The growth kinetics involved in the selective molecular beam epitaxial growth of GaAs ridge QWRs is investigated in detail experimentally and an attempt is made to model the growth theoretically. For this purpose, detailed experiments were carried out on the growth of <110>-oriented AlGaAs-GaAs ridge quantum wires on mesa-patterned (001) GaAs substrates.Aphenomenological modeling was done based on the continuum approximation including parameters such as group III adatom lifetime, diffusion constant and migration length. Computer simulation using the resultant model well reproduces the experimentally observed growth features such as the cross-sectional structure of the ridge wire and its temporal evolution, its temperature dependence and evolution of facet boundary planes. The simple phenomenological model developed here seems to be very useful for design and precise control of the growth process.
Rights: © 2004 American Vacuum Society
Relation: http://scitation.aip.org/jvstb/
Type: article
URI: http://hdl.handle.net/2115/8384
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐藤 威友

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