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Evolution Mechanism of Heterointerface Cross-section during Growth of GaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy
| Title: | Evolution Mechanism of Heterointerface Cross-section during Growth of GaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy |
| Authors: | Sato, Taketomo Browse this author →KAKEN DB | | Tamai, Isao Browse this author | | Yoshida, Souichi Browse this author | | Hasegawa, Hideki Browse this author |
| Keywords: | selective growth | | molecular beam epitaxy (MBE) | | patterned substrate | | growth mechanism | | GaAs |
| Issue Date: | 15-Jul-2004 |
| Publisher: | Elsevier |
| Journal Title: | Applied Surface Science |
| Volume: | 234 |
| Issue: | 1-4 |
| Start Page: | 11 |
| End Page: | 15 |
| Publisher DOI: | 10.1016/j.apsusc.2004.05.018 |
| Abstract: | The mechanism determining heterointerface cross-sections is studied for GaAs ridge quantum wires (QWRs) grown by selective molecular beam epitaxy (MBE). Arrays of <-1 1 0>- and <-1 -1 2>-orientated QWRs were grown on (001) and (111)B GaAs patterned substrates, respectively. A detailed investigation of cross-sections of wires has shown that the boundary planes appear on both sides of QWRs, keeping a constant angle, θ with respect to the flat top of the substrate pattern, and they determine the lateral wire width. Their evolution mechanism has turned out to be a kinetic process, reflecting differences in migration and atom incorporation rates on different facets. Simple formulas for θ have been derived, and they have shown excellent agreements with experiment. This has led to precise kinetic control of the wire width by growth conditions. |
| Relation: | http://www.sciencedirect.com/science/journal/01694332 |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/8385 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 佐藤 威友
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