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Evolution Mechanism of Heterointerface Cross-section during Growth of GaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy

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Title: Evolution Mechanism of Heterointerface Cross-section during Growth of GaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy
Authors: Sato, Taketomo Browse this author →KAKEN DB
Tamai, Isao Browse this author
Yoshida, Souichi Browse this author
Hasegawa, Hideki Browse this author
Keywords: selective growth
molecular beam epitaxy (MBE)
patterned substrate
growth mechanism
GaAs
Issue Date: 15-Jul-2004
Publisher: Elsevier
Journal Title: Applied Surface Science
Volume: 234
Issue: 1-4
Start Page: 11
End Page: 15
Publisher DOI: 10.1016/j.apsusc.2004.05.018
Abstract: The mechanism determining heterointerface cross-sections is studied for GaAs ridge quantum wires (QWRs) grown by selective molecular beam epitaxy (MBE). Arrays of <-1 1 0>- and <-1 -1 2>-orientated QWRs were grown on (001) and (111)B GaAs patterned substrates, respectively. A detailed investigation of cross-sections of wires has shown that the boundary planes appear on both sides of QWRs, keeping a constant angle, θ with respect to the flat top of the substrate pattern, and they determine the lateral wire width. Their evolution mechanism has turned out to be a kinetic process, reflecting differences in migration and atom incorporation rates on different facets. Simple formulas for θ have been derived, and they have shown excellent agreements with experiment. This has led to precise kinetic control of the wire width by growth conditions.
Relation: http://www.sciencedirect.com/science/journal/01694332
Type: article (author version)
URI: http://hdl.handle.net/2115/8385
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐藤 威友

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