Selective MBE Growth of GaAs Ridge Quantum Wire Arrays on Patterned (001) Substrates and Its Growth Mechanism


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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/8386

Title:	Selective MBE Growth of GaAs Ridge Quantum Wire Arrays on Patterned (001) Substrates and Its Growth Mechanism
Authors:	Sato, Taketomo Browse this author
	Tamai, Isao Browse this author
	Hasegawa, Hideki Browse this author
Issue Date:	2003
Publisher:	Institute of Physics
Journal Title:	Institute of Physics conference series
Volume:	174
Start Page:	145
End Page:	148
Abstract:	The selective MBE growth of the <-110>-oriented GaAs ridge QWRs were made in a basis of the proper understanding of growth mechanism on pre-patterned (001) substrates. The arrow-head shaped GaAs wire was selectively formed on the top (113)A facets of GaAs ridge structure utilizing the enhanced growth selectivity against to side (111)A facets. The wire width could be kinetically controlled by the growth process.
Rights:	copyright (C) 2003 IOP Publishing Ltd.
Relation:	http://www.iop.org
Type:	proceedings (author version)
URI:	http://hdl.handle.net/2115/8386
Appears in Collections:	量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐藤威友

OAI-PMH ( junii2 , jpcoar_1.0 )

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