Formation of High-Density GaAs Hexagonal Nano-wire Networks by Selective MBE Growth on Pre-patterned (001) Substrates


Hokkaido University \| Library \| HUSCAP	Advanced Search		言語

	Home
	About HUSCAP
	Open Access Policy

	Browse by Author

Browse
	Communities & Collections

	Scholarly Journals
	Theses
	Doctoral Dissertations Listed by Graduate Schools
	Conference Procs.
	Events

	HUSCAP Senior (in Japanese)

	Societies

	Downloads (country)

For university staff
	How to post your papers to HUSCAP
	Publication of theses
	Helpline about theses publication

Open Archives Compliant

You can search our collection also at:
	Google
	Google Scholar
	CiNii
	IRDB
	OAIster
	NDLTD

Files in This Item:

TSATO49.PDF

1.42 MB

PDF

Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/8387

Title:	Formation of High-Density GaAs Hexagonal Nano-wire Networks by Selective MBE Growth on Pre-patterned (001) Substrates
Authors:	Tamai, Isao Browse this author
	Sato, Taketomo Browse this author →KAKEN DB
	Hasegawa, Hideki Browse this author
Keywords:	selective MBE growth
	quantum wire
	network
	GaAs
	AlGaAs
Issue Date:	Mar-2004
Publisher:	Elsevier
Journal Title:	Physica E: Low-dimensional Systems and Nanostructures
Volume:	21
Issue:	2-4
Start Page:	521
End Page:	526
Publisher DOI:	10.1016/j.physe.2003.11.080
Abstract:	Attempts were made to grow high-density GaAs hexagonal nano-wire networks on (001) patterned substrates by selective molecular beam epitaxy (MBE). To form a hexagon, < -1 0 1 >- and < 5 1 0 >- directions were combined. By the growth of straight wire arrays in each direction, the growth mode, conditions and mechanism were investigated. The wire width was shown to be determined for both directions by the facet boundary planes resulting from the growth rate difference on different facets. By optimizing of growth condition, highly uniform and smoothly connected hexagonal nano-wire networks with a density of 3x10^8 cm^-2 were successfully formed.
Relation:	http://www.sciencedirect.com/science/journal/13869477
Type:	article (author version)
URI:	http://hdl.handle.net/2115/8387
Appears in Collections:	量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 佐藤威友

OAI-PMH ( junii2 , jpcoar_1.0 )

- Hokkaido University