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Teraheltz Response of Schottky Wrap Gate-Controlled Quantum Dots

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Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/8457

Title: Teraheltz Response of Schottky Wrap Gate-Controlled Quantum Dots
Authors: Kasai, Seiya Browse this author →KAKEN DB
Han, Weihua Browse this author
Yumoto, Miki Browse this author
Hasegawa, Hideki Browse this author
Keywords: PACS:73.63.Kv
Issue Date: 26-Jun-2003
Publisher: Wiley-VCH
Journal Title: Physica Status Solidi. C. Current Topics in Solid State Physics
Volume: 0
Issue: 4
Start Page: 1329
End Page: 1332
Publisher DOI: 10.1002/pssc.200303083
Abstract: THz responses of Schottky wrap gate (WPG)-controlled quantum dots were investigated. Normal incidence THz irradiation on single-dot and multi-dot devices with a CH3OH laser (2.54 THz) changed the conductance behavior and produced an additional conductance peak in the I-V characteristics of WPG single electron transistors (SETs) at 5-20 K. The effect depended on the THz electric field polarization. The observed behavior was explained by photon assisted tunneling based on the Tien-Gordon theory.
Rights: Published in "Physica Status Solidi. C. Current Topics in Solid State Physics", volume 0, issue 4, 1329-1332 (26 Jun 2003).
Relation: http://www.interscience.wiley.com/
Type: article (author version)
URI: http://hdl.handle.net/2115/8457
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 葛西 誠也

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