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X-ray Photoelectron Spectroscopy Study of Silicon Interlayer Based Surface Passivation for AlGaAs/GaAs Quantum Structures on (111) B Surfaces

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この文献へのリンクには次のURLを使用してください:http://hdl.handle.net/2115/8495

タイトル: X-ray Photoelectron Spectroscopy Study of Silicon Interlayer Based Surface Passivation for AlGaAs/GaAs Quantum Structures on (111) B Surfaces
著者: Akazawa, Masamichi 著作を一覧する
Shiozaki, Nanako 著作を一覧する
Hasegawa, Hideki 著作を一覧する
発行日: 2006年
出版者: EDP Sciences
誌名: Journal de Physique IV
巻: 132
開始ページ: 95
終了ページ: 99
出版社 DOI: 10.1051/jp4:2006132019
抄録: Applicability of the Si interface control layer (Si ICL)-based surface passivation to GaAs and AlGaAs (111)B surfaces was investigated. An in-situ X-ray photoelectron spectroscopy (XPS) study confirmed formation of the intended passivation structure. MBE grown GaAs and AlGaAs (111)B surfaces showed strong Fermi level pinning. After Si ICL growth, large shifts of the surface Fermi level position were observed. Photoluminescence (PL) measurements were also used to examine the surfaces of AlGaAs/GaAs quantum well and quantum wire structures grown on the GaAs (111)B substrates. PL intensity reduction caused by surface states was recovered remarkably by the Si ICL–based passivation.
Rights: © EDP Sciences 2006
Relation (URI): http://www.edpsciences.org/journal/index.cfm?edpsname=jp4
資料タイプ: article (author version)
URI: http://hdl.handle.net/2115/8495
出現コレクション:雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

提供者: 赤澤 正道

 

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