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X-ray Photoelectron Spectroscopy Study of Silicon Interlayer Based Surface Passivation for AlGaAs/GaAs Quantum Structures on (111) B Surfaces

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Title: X-ray Photoelectron Spectroscopy Study of Silicon Interlayer Based Surface Passivation for AlGaAs/GaAs Quantum Structures on (111) B Surfaces
Authors: Akazawa, Masamichi1 Browse this author →KAKEN DB
Shiozaki, Nanako Browse this author
Hasegawa, Hideki Browse this author →KAKEN DB
Authors(alt): 赤澤, 正道1
Issue Date: 2006
Publisher: EDP Sciences
Journal Title: Journal de Physique IV
Volume: 132
Start Page: 95
End Page: 99
Publisher DOI: 10.1051/jp4:2006132019
Abstract: Applicability of the Si interface control layer (Si ICL)-based surface passivation to GaAs and AlGaAs (111)B surfaces was investigated. An in-situ X-ray photoelectron spectroscopy (XPS) study confirmed formation of the intended passivation structure. MBE grown GaAs and AlGaAs (111)B surfaces showed strong Fermi level pinning. After Si ICL growth, large shifts of the surface Fermi level position were observed. Photoluminescence (PL) measurements were also used to examine the surfaces of AlGaAs/GaAs quantum well and quantum wire structures grown on the GaAs (111)B substrates. PL intensity reduction caused by surface states was recovered remarkably by the Si ICL–based passivation.
Rights: © EDP Sciences 2006
Type: article (author version)
URI: http://hdl.handle.net/2115/8495
Appears in Collections:量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)

Submitter: 赤澤 正道

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